Authors:
Rouillard, Y
Genty, F
Perona, A
Vicet, A
Yarekha, DA
Boissier, G
Grech, P
Baranov, AN
Alibert, C
Citation: Y. Rouillard et al., Edge and vertical surface emitting lasers around 2.0-2.5 mu m and their applications, PHI T ROY A, 359(1780), 2001, pp. 581-597
Authors:
Gerardi, C
Giannini, C
De Caro, L
Tapfer, L
Rouillard, Y
Jenichen, B
Daweritz, L
Ploog, KH
Citation: C. Gerardi et al., Secondary-ion-mass spectrometry and high-resolution x-ray diffraction analyses of GaSb-AlGaSb heterostructures grown by molecular beam epitaxy, J VAC SCI B, 19(3), 2001, pp. 836-842
Authors:
Vicet, A
Nicolas, JC
Genty, F
Rouillard, Y
Skouri, EM
Baranov, AN
Alibert, C
Citation: A. Vicet et al., Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 mu m, IEE P-OPTO, 147(3), 2000, pp. 172-176
Authors:
Yarekha, DA
Glastre, G
Perona, A
Rouillard, Y
Genty, F
Skouri, EM
Boissier, G
Grech, P
Joullie, A
Alibert, C
Baranov, AN
Citation: Da. Yarekha et al., High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wavelasers emitting near 2.3 mu m, ELECTR LETT, 36(6), 2000, pp. 537-539