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Results: 4
Drift of interstitial iron in a space charge region of p-type Si Schottky diode
Authors:
Koveshnikov, S Choi, B Yarykin, N Rozgonyi, G
Citation:
S. Koveshnikov et al., Drift of interstitial iron in a space charge region of p-type Si Schottky diode, PHYSICA B, 274, 1999, pp. 395-397
In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions
Authors:
Yarykin, N Cho, CR Zuhr, R Rozgonyi, G
Citation:
N. Yarykin et al., In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions, PHYSICA B, 274, 1999, pp. 485-488
Analysis of capacitor breakdown mechanisms due to crystal-originated pits
Authors:
Ono, T Rozgonyi, G Horie, H Miyazaki, M Tsuya, H
Citation:
T. Ono et al., Analysis of capacitor breakdown mechanisms due to crystal-originated pits, IEEE ELEC D, 20(10), 1999, pp. 504-506
Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers
Authors:
Romanowski, A Rozgonyi, G Tamatsuka, M
Citation:
A. Romanowski et al., Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers, J APPL PHYS, 85(9), 1999, pp. 6408-6414
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