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Results:
1-14
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Results: 14
Authors:
Rozgonyi, GA
Glasko, JM
Beaman, KL
Koveshnikov, SV
Citation: Ga. Rozgonyi et al., Gettering issues using MeV ion implantation, MAT SCI E B, 72(2-3), 2000, pp. 87-92
Authors:
Tu, HL
Rozgonyi, GA
Citation: Hl. Tu et Ga. Rozgonyi, Special issue: Containing papers presented at the International Conferenceon Advanced Materials 1999, Symposium M: Silicon-Based Materials and Devices, June 13-18, 1999, Beijing, China - Preface, MAT SCI E B, 72(2-3), 2000, pp. V-V
Authors:
Kawamura, T
Kanzawa, T
Kojima, S
Rozgonyi, GA
Citation: T. Kawamura et al., Reconstructed (12,2,7) Si surface structure observed by scanning tunnelingmicroscopy, J APPL PHYS, 87(2), 2000, pp. 711-716
Authors:
Sasaki, T
Ono, T
Rozgonyi, GA
Citation: T. Sasaki et al., Size distribution of oxide precipitates in annealed Czochralski silicon, EL SOLID ST, 2(11), 1999, pp. 589-591
Authors:
Brown, RA
Kononchuk, O
Rozgonyi, GA
Citation: Ra. Brown et al., Simulation of metallic impurity gettering in silicon by MeV ion implantation, NUCL INST B, 148(1-4), 1999, pp. 322-328
Authors:
Ono, T
Romanowski, A
Asayama, E
Horie, H
Sueoka, K
Tsuya, H
Rozgonyi, GA
Citation: T. Ono et al., Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon, J ELCHEM SO, 146(9), 1999, pp. 3461-3465
Authors:
Ono, T
Asayama, E
Horie, H
Hourai, M
Sueoka, K
Tsuya, H
Rozgonyi, GA
Citation: T. Ono et al., Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon, J ELCHEM SO, 146(6), 1999, pp. 2239-2244
Authors:
Beaman, KL
Kononchuk, O
Koveshnikov, S
Osburn, CM
Rozgonyi, GA
Citation: Kl. Beaman et al., Lateral gettering of Fe on bulk and silicon-on-insulator wafers, J ELCHEM SO, 146(5), 1999, pp. 1925-1928
Authors:
Kirk, HR
Radzimski, Z
Romanowski, A
Rozgonyi, GA
Citation: Hr. Kirk et al., Bias dependent contrast mechanisms in EBIC images of MOS capacitors, J ELCHEM SO, 146(4), 1999, pp. 1529-1535
Authors:
Ono, T
Rozgonyi, GA
Au, C
Messina, T
Goodall, RK
Huff, HR
Citation: T. Ono et al., Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers, J ELCHEM SO, 146(10), 1999, pp. 3807-3811
Authors:
Yarykin, N
Cho, CR
Rozgonyi, GA
Zuhr, RA
Citation: N. Yarykin et al., The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K, APPL PHYS L, 75(2), 1999, pp. 241-243
Authors:
Cho, CR
Yarykin, N
Brown, RA
Kononchuk, O
Rozgonyi, GA
Zuhr, RA
Citation: Cr. Cho et al., Evolution of deep-level centers in p-type silicon following ion implantation at 85 K, APPL PHYS L, 74(9), 1999, pp. 1263-1265
Authors:
Ono, T
Rozgonyi, GA
Asayama, E
Horie, H
Tsuya, H
Sueoka, K
Citation: T. Ono et al., Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers, APPL PHYS L, 74(24), 1999, pp. 3648-3650
Authors:
Kononchuk, O
Korablev, KG
Yarykin, N
Rozgonyi, GA
Citation: O. Kononchuk et al., Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures, APPL PHYS L, 73(9), 1998, pp. 1206-1208
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1-14
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