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Results: 1-17 |
Results: 17
Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) - art. no. 235307
Authors: Rubini, S Pelucchi, E Lazzarino, M Kumar, D Franciosi, A Berthod, C Binggeli, N Baldereschi, A
Citation: S. Rubini et al., Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) - art. no. 235307, PHYS REV B, 6323(23), 2001, pp. 5307
Structural and electronic properties of ZnSe/AlAs heterostructures - art. no. 155312
Authors: Rubini, S Milocco, E Sorba, L Pelucchi, E Franciosi, A Garulli, A Parisini, A Zhuang, Y Bauer, G
Citation: S. Rubini et al., Structural and electronic properties of ZnSe/AlAs heterostructures - art. no. 155312, PHYS REV B, 6315(15), 2001, pp. 5312
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model - art. no. 216808
Authors: Giazotto, F Pingue, P Beltram, F Lazzarino, M Orani, D Rubini, S Franciosi, A
Citation: F. Giazotto et al., Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model - art. no. 216808, PHYS REV L, 8721(21), 2001, pp. 6808
Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles
Authors: Bonanni, B Orani, D Lazzarino, M Rubini, S Franciosi, A
Citation: B. Bonanni et al., Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles, APPL PHYS L, 79(10), 2001, pp. 1462-1464
Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures
Authors: Bonanni, B Pelucchi, E Rubini, S Orani, D Franciosi, A Garulli, A Parisini, A
Citation: B. Bonanni et al., Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures, APPL PHYS L, 78(4), 2001, pp. 434-436
Reflectionless tunneling in planar Nb/GaAs hybrid junctions
Authors: Giazotto, F Cecchini, M Pingue, P Beltram, F Lazzarino, M Orani, D Rubini, S Franciosi, A
Citation: F. Giazotto et al., Reflectionless tunneling in planar Nb/GaAs hybrid junctions, APPL PHYS L, 78(12), 2001, pp. 1772-1774
Band discontinuities in ZnMgSe/ZnCdSe(001) lattice-matched heterostructures
Authors: Pelucchi, E Rubini, S Bonanni, B Franciosi, A Peressi, M
Citation: E. Pelucchi et al., Band discontinuities in ZnMgSe/ZnCdSe(001) lattice-matched heterostructures, APPL PHYS L, 78(11), 2001, pp. 1574-1576
Tunable Schottky barrier contacts to InxGa1-xAs
Authors: Marinelli, C Sorba, L Lazzarino, M Kumar, D Pelucchi, E Muller, BH Orani, D Rubini, S Franciosi, A De Franceshi, S Beltran, F
Citation: C. Marinelli et al., Tunable Schottky barrier contacts to InxGa1-xAs, J VAC SCI B, 18(4), 2000, pp. 2119-2127
ZnSe/CdTe/ZnSe heterostructures
Authors: Rubini, S Bonanni, B Pelucchi, E Franciosi, A Garulli, A Parisini, A Zhuang, Y Bauer, G Holy, V
Citation: S. Rubini et al., ZnSe/CdTe/ZnSe heterostructures, J VAC SCI B, 18(4), 2000, pp. 2263-2270
Cluster-assembled carbon films with different nanostructures: a spectroscopic study
Authors: Riedo, E Magnano, E Rubini, S Sancrotti, M Barborini, E Piseri, P Milani, P
Citation: E. Riedo et al., Cluster-assembled carbon films with different nanostructures: a spectroscopic study, SOL ST COMM, 116(5), 2000, pp. 287-292
Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beamepitaxy
Authors: Hierro, A Kwon, D Ringel, SA Rubini, S Pelucchi, E Franciosi, A
Citation: A. Hierro et al., Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beamepitaxy, J APPL PHYS, 87(2), 2000, pp. 730-738
Verocytotoxin-producing Escherichia coli O157 in sheep milk
Authors: Rubini, S Cardeti, G Amiti, S Manna, G Onorati, R Caprioli, A Morabito, S
Citation: S. Rubini et al., Verocytotoxin-producing Escherichia coli O157 in sheep milk, VET REC, 144(2), 1999, pp. 56-56
CdTe epitaxial layers in ZnSe-based heterostructures
Authors: Rubini, S Bonanni, B Pelucchi, E Franciosi, A Zhuang, Y Bauer, G
Citation: S. Rubini et al., CdTe epitaxial layers in ZnSe-based heterostructures, J CRYST GR, 202, 1999, pp. 465-469
Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs
Authors: Marinelli, C Sorba, L Muller, BH Kumar, D Orani, D Rubini, S Franciosi, A De Franceschi, S Lazzarino, M Beltram, F
Citation: C. Marinelli et al., Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs, J CRYST GR, 202, 1999, pp. 769-772
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers
Authors: Muller, BH Lantier, R Sorba, L Heun, S Rubini, S Lazzarino, M Franciosi, A Napolitani, E Romanato, F Drigo, AV Lazzarini, L Salviati, G
Citation: Bh. Muller et al., Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers, J APPL PHYS, 85(12), 1999, pp. 8160-8169
Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy
Authors: Hierro, A Kwon, D Goss, SH Brillson, LJ Ringel, SA Rubini, S Pelucchi, E Franciosi, A
Citation: A. Hierro et al., Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy, APPL PHYS L, 75(6), 1999, pp. 832-834
Resonant second harmonic generation in ZnSe bulk microcavity
Authors: Pellegrini, V Colombelli, R Carusotto, I Beltram, F Rubini, S Lantier, R Franciosi, A Vinegoni, C Pavesi, L
Citation: V. Pellegrini et al., Resonant second harmonic generation in ZnSe bulk microcavity, APPL PHYS L, 74(14), 1999, pp. 1945-1947
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