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Results: 1-9 |
Results: 9

Authors: Shur, MS Sinius, J Gaska, R Rumyantsev, S
Citation: Ms. Shur et al., Photovoltaic effect in CdS on flexible substrate, ELECTR LETT, 37(8), 2001, pp. 518-519

Authors: Gaska, R Shur, MS Hu, X Yang, JW Tarakji, A Simin, G Khan, A Deng, J Werner, T Rumyantsev, S Pala, N
Citation: R. Gaska et al., Highly doped thin-channel GaN-metal-semiconductor field-effect transistors, APPL PHYS L, 78(6), 2001, pp. 769-771

Authors: Bougrov, V Levinshtein, M Rumyantsev, S Zubrilov, A
Citation: V. Bougrov et al., Gallium nitride (GaN), PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, 2001, pp. 1-30

Authors: Rumyantsev, S Levinshtein, M Jackson, AD Mohammad, SN Harris, GL Spencer, MG Shur, M
Citation: S. Rumyantsev et al., Boron nitride (BN), PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, 2001, pp. 67-92

Authors: Goldberg, Y Levinshtein, M Rumyantsev, S
Citation: Y. Goldberg et al., Silicon carbide (SiC), PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, 2001, pp. 93-147

Authors: Deen, MJ Rumyantsev, S
Citation: Mj. Deen et S. Rumyantsev, Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors, MICROEL REL, 40(11), 2000, pp. 1855-1861

Authors: Rumyantsev, S Levinshtein, ME Gaska, R Shur, MS Yang, JW Khan, MA
Citation: S. Rumyantsev et al., Low-frequency noise in AlGaN/GaN heterojunction field effect transistors on SiC and sapphire substrates, J APPL PHYS, 87(4), 2000, pp. 1849-1854

Authors: Pala, N Gaska, R Rumyantsev, S Shur, MS Khan, MA Hu, X Simin, G Yang, J
Citation: N. Pala et al., Low-frequency noise in AlGaN/GaN MOS-HFETs, ELECTR LETT, 36(3), 2000, pp. 268-270

Authors: Rumyantsev, S Levinshtein, ME Gaska, R Shur, MS Khan, A Yang, JW Simin, G Ping, A Adesida, T
Citation: S. Rumyantsev et al., Low 1/f noise in AlGaN/GaN HFETs on SiC substrates, PHYS ST S-A, 176(1), 1999, pp. 201-204
Risultati: 1-9 |