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Results: 1-8 |
Results: 8
Chemical vapor deposition of TBG: An alternative process for gas turbine components
Authors: Wahl, G Nemetz, W Giannozzi, M Rushworth, S Baxter, D Archer, N Cernuschi, F Boyle, N
Citation: G. Wahl et al., Chemical vapor deposition of TBG: An alternative process for gas turbine components, J ENG GAS T, 123(3), 2001, pp. 520-524
Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source
Authors: Shashkin, V Rushworth, S Danil'tsev, V Murel, A Drozdov, Y Gusev, S Khrykin, O Vostokovi, N
Citation: V. Shashkin et al., Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source, J ELEC MAT, 30(8), 2001, pp. 980-986
Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
Authors: de Mierry, P Beaumont, B Feltin, E Schenk, HPD Gibart, P Jomard, F Rushworth, S Smith, L Odedra, R
Citation: P. De Mierry et al., Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN., MRS I J N S, 5(8), 2000, pp. 1-3
Study of polycrystalline CuGaSe2 thin films deposited by MOCVD onto ZnO substrates
Authors: Orsal, G Mailly, F Romain, N Artaud, MC Rushworth, S Duchemin, S
Citation: G. Orsal et al., Study of polycrystalline CuGaSe2 thin films deposited by MOCVD onto ZnO substrates, THIN SOL FI, 361, 2000, pp. 135-139
Defects in CuGaSe2 thin films grown by MOCVD
Authors: Bauknecht, A Siebentritt, S Gerhard, A Harneit, W Brehme, S Albert, J Rushworth, S Lux-Steiner, MC
Citation: A. Bauknecht et al., Defects in CuGaSe2 thin films grown by MOCVD, THIN SOL FI, 361, 2000, pp. 426-431
Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors
Authors: Philippens, M Oligschlaeger, R Gerard, B Rushworth, S Gil-Lafon, E Napierala, J Jimenez, J Heime, K
Citation: M. Philippens et al., Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors, J CRYST GR, 221, 2000, pp. 225-230
MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor
Authors: Giesen, C Szymakowski, A Rushworth, S Heuken, M Heime, K
Citation: C. Giesen et al., MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor, J CRYST GR, 221, 2000, pp. 450-455
InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 mu m
Authors: Joullie, A Skouri, EM Garcia, M Grech, P Wilk, A Christol, P Baranov, AN Behres, A Kluth, J Stein, A Heime, K Heuken, M Rushworth, S Hulicius, E Simecek, T
Citation: A. Joullie et al., InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 mu m, APPL PHYS L, 76(18), 2000, pp. 2499-2501
Risultati: 1-8 |