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SHEKHOVTSOV LV
SEMENOVA GN
VENGER EF
SACHENKO AV
SADOFEV YG
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SEMENOVA GN
KRYSHTAB TG
SHEKHOVTSOV LV
SADOFEV YG
Citation: Gn. Semenova et al., MICROSTRUCTURE OF GERMANIUM FILMS PREPARE D THROUGH THE MOLECULAR-BEAM EPITAXY ON GALLIUM-ARSENIDE SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 22(5), 1996, pp. 75-80
Authors:
EVSTROPOV VV
ZHILYAEV YV
NAZAROV N
SADOFEV YG
TOPCHII AN
FALEEV NN
FEDOROV LM
SHERNYAKOV YM
Citation: Vv. Evstropov et al., EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES, Semiconductors, 29(3), 1995, pp. 195-198
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Authors:
SKORIKOV ML
ZASAVITSKII II
KAZAKOV IP
SIBELDIN NN
TSVETKOV VA
TSEKHOSH VI
SADOFEV YG
Citation: Ml. Skorikov et al., MAGNETIC TRAPPING OF CHARGE-CARRIERS IN THE QUANTUM-WELLS OF AN ASYMMETRIC 2-WELL SEMICONDUCTOR STRUCTURE, JETP letters, 62(6), 1995, pp. 522-527
Citation: Yg. Sadofev, CHARACTERISTICS OF HETERODIFFUSION AND PR OPERTIES OF GERMANIUM FILMSON GALLIUM-ARSENIDE PREPARED VIA EPITAXY FROM MOLECULAR CLUSTERS, Pis'ma v Zurnal tehniceskoj fiziki, 19(10), 1993, pp. 5-10