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Results: 1-9 |
Results: 9
RELIABILITY OF NITRIDED WET SILICON DIOXIDE THIN-FILMS IN WSI2 OR TASI2 POLYCIDE PROCESS - INFLUENCE OF THE NITRIDATION TEMPERATURE
Authors: YCKACHE K BOIVIN P BAIGET F RADJAA S AURIEL G SAGNES B OUALID J GLACHANT A
Citation: K. Yckache et al., RELIABILITY OF NITRIDED WET SILICON DIOXIDE THIN-FILMS IN WSI2 OR TASI2 POLYCIDE PROCESS - INFLUENCE OF THE NITRIDATION TEMPERATURE, Microelectronics and reliability, 38(6-8), 1998, pp. 937-942
NEW INSIGHTS ON THE CHARGING AND DISCHARGING OF ELECTRON TRAPS CREATED BY HOMOGENEOUS ELECTRON INJECTION IN GATE OXIDE
Authors: AURIEL G DUBUC JP SAGNES B OUALID J VUILLAUME D
Citation: G. Auriel et al., NEW INSIGHTS ON THE CHARGING AND DISCHARGING OF ELECTRON TRAPS CREATED BY HOMOGENEOUS ELECTRON INJECTION IN GATE OXIDE, Microelectronic engineering, 36(1-4), 1997, pp. 309-312
METHODS TO DETERMINE ELECTRON TRAPS CREATED IN GATE OXIDES BY FOWLER-NORDHEIM INJECTION
Authors: AURIEL G DUBUC JP SAGNES B OUALID J
Citation: G. Auriel et al., METHODS TO DETERMINE ELECTRON TRAPS CREATED IN GATE OXIDES BY FOWLER-NORDHEIM INJECTION, Journal of non-crystalline solids, 220(2-3), 1997, pp. 157-163
RELAXATION OF THE SPACE-CHARGE CREATED BY FOWLER-NORDHEIM INJECTIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: SAGNES B MORAGUES JM YCKACHE K JERISIAN R OUALID J VUILLAUME D
Citation: B. Sagnes et al., RELAXATION OF THE SPACE-CHARGE CREATED BY FOWLER-NORDHEIM INJECTIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 80(9), 1996, pp. 5469-5477
CARBONIZATION OF SI SURFACES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
Authors: ZEKENTES K CALLEC R TSAGARAKI K SAGNES B ARNAUD G PASCUAL J CAMASSEL J
Citation: K. Zekentes et al., CARBONIZATION OF SI SURFACES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 138-141
EXPERIMENTS AND MODELING TO DETERMINE TRAPPED HOLES AND SLOW STATES IN FOWLER-NORDHEIM STRESSED MOS CAPACITORS
Authors: MORAGUES JM SAGNES B YCKACHE K JERISIAN R OUALID J VUILLAUME D
Citation: Jm. Moragues et al., EXPERIMENTS AND MODELING TO DETERMINE TRAPPED HOLES AND SLOW STATES IN FOWLER-NORDHEIM STRESSED MOS CAPACITORS, Microelectronic engineering, 28(1-4), 1995, pp. 329-332
INFLUENCE OF FN ELECTRON INJECTIONS IN DRY AND DRY WET DRY GATE OXIDES - RELATION WITH FAILURE
Authors: CIANTAR E BOIVIN P BURLE M NIEL C MORAGUES JM SAGNES B JERISIAN R OUALID J
Citation: E. Ciantar et al., INFLUENCE OF FN ELECTRON INJECTIONS IN DRY AND DRY WET DRY GATE OXIDES - RELATION WITH FAILURE, Journal of non-crystalline solids, 187, 1995, pp. 144-148
INFLUENCE OF WSI2 POLYSILICIDE GATE PROCESS ON INTEGRITY AND RELIABILITY OF GATE AND TUNNEL OXIDES
Authors: MORAGUES JM SAGNES B JERISIAN R OUALID J CIANTAR E LIOTARD JL MERENDA P
Citation: Jm. Moragues et al., INFLUENCE OF WSI2 POLYSILICIDE GATE PROCESS ON INTEGRITY AND RELIABILITY OF GATE AND TUNNEL OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 156-159
SURFACE-POTENTIAL DETERMINATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: MORAGUES JM CIANTAR E JERISIAN R SAGNES B OUALID J
Citation: Jm. Moragues et al., SURFACE-POTENTIAL DETERMINATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(9), 1994, pp. 5278-5287
Risultati: 1-9 |