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STAUFFER L
SAINTENOY S
PIRRI C
WETZEL P
GEWINNER G
MINOT C
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SAINTENOY S
PIRRI C
BOLMONT D
GEWINNER G
ROGE TP
PALMINO F
SAVALL C
LABRUNE JC
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Authors:
SAINTENOY S
WETZEL P
PIRRI C
BOLMONT D
GEWINNER G
Citation: S. Saintenoy et al., INTERACTION OF H WITH EPITAXIAL ER SILICIDE LAYERS ON SI(111) - ADSORPTION VERSUS ABSORPTION, Surface science, 349(2), 1996, pp. 145-154
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SAINTENOY S
WETZEL P
PIRRI C
BOLMONT D
GEWINNER G
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Authors:
MHARCHI A
STAUFFER L
SAINTENOY S
PIRRI C
WETZEL P
BOLMONT D
GEWINNER G
Citation: A. Mharchi et al., SURFACE ATOMIC-STRUCTURE AND SYMMETRY PROPERTIES OF ERSI1.7 ON SI(111), Solid state communications, 97(3), 1996, pp. 249-254
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STAUFFER L
MHARCHI A
SAINTENOY S
PIRRI C
WETZEL P
BOLMONT D
GEWINNER G
Citation: L. Stauffer et al., SURFACE ELECTRONIC AND ATOMIC-STRUCTURE OF ERSI1.7 ON SI(111), Physical review. B, Condensed matter, 52(16), 1995, pp. 11932-11937
Authors:
SAINTENOY S
WETZEL P
PIRRI C
BOLMONT D
GEWINNER G
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Authors:
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SAINTENOY S
PIRRI C
BOLMONT D
GEWINNER G
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Authors:
WETZEL P
SAINTENOY S
PIRRI C
BOLMONT D
GEWINNER G
Citation: P. Wetzel et al., SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111), Physical review. B, Condensed matter, 50(15), 1994, pp. 10886-10892