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Results: 1-13 |
Results: 13

Authors: SONNET P STAUFFER L SAINTENOY S PIRRI C WETZEL P GEWINNER G MINOT C
Citation: P. Sonnet et al., ELECTRONIC AND ATOMIC-STRUCTURE OF 2-DIMENSIONAL ERSI2 (1X1)-H ON SI(111), Physical review. B, Condensed matter, 56(23), 1997, pp. 15171-15179

Authors: STAUFFER L MHARCHI A SAINTENOY S PIRRI C WETZEL P BOLMONT D GEWINNER G
Citation: L. Stauffer et al., VACANCY-INDUCED ELECTRONIC STATES IN ERSI1.7(0001), Journal of physics and chemistry of solids, 58(4), 1997, pp. 567-572

Authors: WETZEL P SAINTENOY S PIRRI C BOLMONT D GEWINNER G ROGE TP PALMINO F SAVALL C LABRUNE JC
Citation: P. Wetzel et al., STM INVESTIGATION OF 2-DIMENSIONAL AND 3-DIMENSIONAL ER DISILICIDE GROWN EPITAXIALLY ON SI(111), Surface science, 355(1-3), 1996, pp. 13-20

Authors: ROGE TP PALMINO F SAVALL C LABRUNE JC SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: Tp. Roge et al., INITIAL GROWTH MODE OF ER SILICIDE ON SI(111) BY SOLID-PHASE EPITAXY, Surface science, 352, 1996, pp. 622-627

Authors: SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: S. Saintenoy et al., INTERACTION OF H WITH EPITAXIAL ER SILICIDE LAYERS ON SI(111) - ADSORPTION VERSUS ABSORPTION, Surface science, 349(2), 1996, pp. 145-154

Authors: SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: S. Saintenoy et al., OBSERVATION OF A TEMPORAL EVOLUTION OF DEFECTED EPITAXIAL ERBIUM SILICIDE LAYERS AT ROOM-TEMPERATURE, Solid state communications, 98(11), 1996, pp. 1015-1019

Authors: MHARCHI A STAUFFER L SAINTENOY S PIRRI C WETZEL P BOLMONT D GEWINNER G
Citation: A. Mharchi et al., SURFACE ATOMIC-STRUCTURE AND SYMMETRY PROPERTIES OF ERSI1.7 ON SI(111), Solid state communications, 97(3), 1996, pp. 249-254

Authors: STAUFFER L MHARCHI A SAINTENOY S PIRRI C WETZEL P BOLMONT D GEWINNER G
Citation: L. Stauffer et al., SURFACE ELECTRONIC AND ATOMIC-STRUCTURE OF ERSI1.7 ON SI(111), Physical review. B, Condensed matter, 52(16), 1995, pp. 11932-11937

Authors: SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: S. Saintenoy et al., SURFACE ELECTRONIC-STRUCTURE OF EPITAXIAL ROOT-3X-ROOT-3 R30-DEGREES ER SILICIDE ON SI(111), Surface science, 333, 1995, pp. 546-551

Authors: SAINTENOY S WETZEL P PIRRI C PERUCHETTI JC BOLMONT D GEWINNER G
Citation: S. Saintenoy et al., HYDROGEN ADSORPTION ON ERBIUM SILICIDE SURFACE, Solid state communications, 94(9), 1995, pp. 719-723

Authors: WETZEL P SAINTENOY S PIRRI C BOLMONT D GEWINNER G
Citation: P. Wetzel et al., SYMMETRY PROPERTIES OF THE ERSI(1.7)-VALENCE BAND STATES, Solid state communications, 93(7), 1995, pp. 557-561

Authors: WETZEL P SAINTENOY S PIRRI C BOLMONT D GEWINNER G
Citation: P. Wetzel et al., SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111), Physical review. B, Condensed matter, 50(15), 1994, pp. 10886-10892

Authors: WETZEL P SAINTENOY S PIRRI C BOLMONT D GEWINNER G
Citation: P. Wetzel et al., SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111), Physical review. B, Condensed matter, 50(15), 1994, pp. 10886-10892
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