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Results:
1-8
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Results: 8
Authors:
ELHDIY A
SALACE G
JOURDAIN M
MEINERTZHAGEN A
VUILLAUME D
Citation: A. Elhdiy et al., STRESS-FIELD POLARITY EFFECT ON DEFECTS GENERATION IN THIN SILICON DIOXIDE FILMS, Thin solid films, 296(1-2), 1997, pp. 106-109
Authors:
AASSIME A
SARRABAYROUSE GJ
SALACE G
PETIT C
Citation: A. Aassime et al., IRRADIATION EFFECTS ON THE HIGH-FIELD BEHAVIOR OF VERY THIN SILICA LAYERS, Solid-state electronics, 41(7), 1997, pp. 945-949
Authors:
MEINERTZHAGEN A
PETIT C
YARD G
JAURDAIN M
SALACE G
Citation: A. Meinertzhagen et al., ON THE DECAY OF THE TRAPPED HOLES AND THE SLOW STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 79(5), 1996, pp. 2549-2558
Authors:
GRUZZA B
BIDEUX L
ROBERT C
SALACE G
VAZSONYI E
PETO G
GUCZI L
GERGELY G
Citation: B. Gruzza et al., INTERDISCIPLINARY SURFACE STUDIES ON POROUS SI(PSI) .1. ELASTIC PEAK ELECTRON-SPECTROSCOPY (EPES), VALENCE-BAND XPS AND ATOMIC-FORCE MICROSCOPY (AFM), Vacuum, 46(5-6), 1995, pp. 493-495
Authors:
MEINERTZHAGEN A
YARD G
PETIT C
JOURDAIN M
ELHDIY A
SALACE G
REIMBOLD G
Citation: A. Meinertzhagen et al., COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES, Journal of non-crystalline solids, 187, 1995, pp. 181-185
Authors:
ELHDIY A
SALACE G
MEINERTZHAGEN A
JOURDAIN M
PETIT C
AASSIME A
Citation: A. Elhdiy et al., THE NO-THERMAL ACTIVATION OF THE DEFECT GENERATION MECHANISM IN A MOSSTRUCTURE, Journal of non-crystalline solids, 187, 1995, pp. 216-220
Authors:
SARRABAYROUSE GJ
SALACE G
AASIME A
PETIT C
Citation: Gj. Sarrabayrouse et al., INFLUENCE OF IONIZING-RADIATION ON THE CONDUCTION PROPERTIES OF ULTRA-THIN SILICA LAYERS, Microelectronics, 25(7), 1994, pp. 583-588
Authors:
ELHDIY A
SALACE G
PETIT C
JOURDAIN M
VUILLAUME D
Citation: A. Elhdiy et al., STUDY OF DEFECTS INDUCED BY HIGH-ELECTRIC-FIELD STRESS INTO A THIN GATE OXIDE (11 NM) OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 74(2), 1993, pp. 1124-1130
Risultati:
1-8
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