Authors:
WIESMANN D
HUBNER J
GERMANN R
MASSAREK I
SALEMINK HWM
BONA GL
KRISTENSEN M
JACKEL H
Citation: D. Wiesmann et al., LARGE UV-INDUCED NEGATIVE INDEX CHANGES IN GERMANIUM-FREE NITROGEN-DOPED PLANAR SIO2 WAVE-GUIDES, Electronics Letters, 34(4), 1998, pp. 364-366
Authors:
PFISTER M
JOHNSON MB
ALVARADO SF
SALEMINK HWM
MARTI U
MARTIN D
MORIERGENOUD F
REINHART FK
Citation: M. Pfister et al., SURFACE AND SUBSURFACE IMAGING OF INDIUM IN INGAAS BY SCANNING-TUNNELING-MICROSCOPY, Applied surface science, 104, 1996, pp. 516-521
Authors:
KOENRAAD PM
JOHNSON MB
SALEMINK HWM
VANDERVLEUTEN WC
WOLTER JH
Citation: Pm. Koenraad et al., BE DELTA-DOPED LAYERS IN GAAS STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 485-488
Authors:
JOHNSON MB
KOENRAAD PM
VANDERVLEUTEN WC
SALEMINK HWM
WOLTER H
Citation: Mb. Johnson et al., BE DELTA-DOPED LAYERS IN GAAS IMAGED WITH ATOMIC-RESOLUTION USING SCANNING-TUNNELING-MICROSCOPY, Physical review letters, 75(8), 1995, pp. 1606-1609
Authors:
PFISTER M
JOHNSON MB
ALVARADO SF
SALEMINK HWM
MARTI U
MARTIN D
MORIERGENOUD F
REINHART FK
Citation: M. Pfister et al., INDIUM DISTRIBUTION IN INGAAS QUANTUM WIRES OBSERVED WITH THE SCANNING TUNNELING MICROSCOPE, Applied physics letters, 67(10), 1995, pp. 1459-1461
Authors:
ALBREKTSEN O
SALEMINK HWM
MORCH KA
THOLEN AR
Citation: O. Albrektsen et al., RELIABLE TIP PREPARATION FOR HIGH-RESOLUTION SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3187-3190
Citation: Hwm. Salemink et al., CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY ON HETEROSTRUCTURES - ATOMIC-RESOLUTION, COMPOSITION FLUCTUATIONS AND DOPING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 362-368
Citation: Mb. Johnson et Hwm. Salemink, CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY ON SEMICONDUCTOR HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 213-217
Authors:
PFISTER M
JOHNSON MB
ALVARADO SF
SALEMINK HWM
MARTI U
MARTIN D
MORIERGENOUD F
REINHART FK
Citation: M. Pfister et al., ATOMIC-STRUCTURE AND LUMINESCENCE EXCITATION OF GAAS (ALAS)N(GAAS)M QUANTUM WIRES WITH THE SCANNING TUNNELING MICROSCOPE/, Applied physics letters, 65(9), 1994, pp. 1168-1170
Citation: Mb. Johnson et al., ATOMIC-SCALE VIEW OF ALGAAS GAAS HETEROSTRUCTURES WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY/, Applied physics letters, 63(9), 1993, pp. 1273-1275
Citation: Mb. Johnson et al., DOPANT AND CARRIER PROFILING IN MODULATION-DOPED GAAS MULTILAYERS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 63(26), 1993, pp. 3636-3638
Authors:
JOHNSON MB
ALBREKTSEN O
FEENSTRA RM
SALEMINK HWM
Citation: Mb. Johnson et al., DIRECT IMAGING OF DOPANTS IN GAAS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 63(21), 1993, pp. 2923-2925
Authors:
ALBREKTSEN O
MEIER HP
ARENT DJ
SALEMINK HWM
Citation: O. Albrektsen et al., TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS, Applied physics letters, 62(17), 1993, pp. 2105-2107