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Results: 1-11 |
Results: 11
TOWARD DEVICE-QUALITY GAAS GROWTH BY MOLECULAR-BEAM EPITAXY ON OFFCUTGE SI1-XGEX/SI SUBSTRATES/
Authors: SIEG RM RINGEL SA TING SM SAMAVEDAM SB CURRIE M LANGDO T FITZGERALD EA
Citation: Rm. Sieg et al., TOWARD DEVICE-QUALITY GAAS GROWTH BY MOLECULAR-BEAM EPITAXY ON OFFCUTGE SI1-XGEX/SI SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1471-1474
ADVANCED SALICIDES FOR 0.10 MU-M CMOS - CO SALICIDE PROCESSES WITH LOW DIODE LEAKAGE AND TI SALICIDE PROCESSES WITH DIRECT FORMATION OF LOW-RESISTIVITY C54 TISI2
Authors: KITTL JA HONG QZ YANG H YU N SAMAVEDAM SB GRIBELYUK MA
Citation: Ja. Kittl et al., ADVANCED SALICIDES FOR 0.10 MU-M CMOS - CO SALICIDE PROCESSES WITH LOW DIODE LEAKAGE AND TI SALICIDE PROCESSES WITH DIRECT FORMATION OF LOW-RESISTIVITY C54 TISI2, Thin solid films, 332(1-2), 1998, pp. 404-411
MECHANISM OF LOW-TEMPERATURE C54 TISI2 FORMATION BYPASSING C49 TISI2 - EFFECT OF SI MICROSTRUCTURE AND MO IMPURITIES ON THE TI-SI REACTION-PATH
Authors: KITTL JA GRIBELYUK MA SAMAVEDAM SB
Citation: Ja. Kittl et al., MECHANISM OF LOW-TEMPERATURE C54 TISI2 FORMATION BYPASSING C49 TISI2 - EFFECT OF SI MICROSTRUCTURE AND MO IMPURITIES ON THE TI-SI REACTION-PATH, Applied physics letters, 73(7), 1998, pp. 900-902
HIGH-QUALITY GERMANIUM PHOTODIODES INTEGRATED ON SILICON SUBSTRATES USING OPTIMIZED RELAXED GRADED BUFFERS
Authors: SAMAVEDAM SB CURRIE MT LANGDO TA FITZGERALD EA
Citation: Sb. Samavedam et al., HIGH-QUALITY GERMANIUM PHOTODIODES INTEGRATED ON SILICON SUBSTRATES USING OPTIMIZED RELAXED GRADED BUFFERS, Applied physics letters, 73(15), 1998, pp. 2125-2127
CONTROLLING THREADING DISLOCATION DENSITIES IN GE ON SI USING GRADED SIGE LAYERS AND CHEMICAL-MECHANICAL POLISHING
Authors: CURRIE MT SAMAVEDAM SB LANGDO TA LEITZ CW FITZGERALD EA
Citation: Mt. Currie et al., CONTROLLING THREADING DISLOCATION DENSITIES IN GE ON SI USING GRADED SIGE LAYERS AND CHEMICAL-MECHANICAL POLISHING, Applied physics letters, 72(14), 1998, pp. 1718-1720
INFLUENCE OF STRAIN ON SEMICONDUCTOR THIN-FILM EPITAXY
Authors: FITZGERALD EA SAMAVEDAM SB XIE YH GIOVANE LM
Citation: Ea. Fitzgerald et al., INFLUENCE OF STRAIN ON SEMICONDUCTOR THIN-FILM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1048-1056
LINE, POINT AND SURFACE DEFECT MORPHOLOGY OF GRADED, RELAXED GESI ALLOYS ON SI SUBSTRATES
Authors: FITZGERALD EA SAMAVEDAM SB
Citation: Ea. Fitzgerald et Sb. Samavedam, LINE, POINT AND SURFACE DEFECT MORPHOLOGY OF GRADED, RELAXED GESI ALLOYS ON SI SUBSTRATES, Thin solid films, 294(1-2), 1997, pp. 3-10
NOVEL DISLOCATION-STRUCTURE AND SURFACE-MORPHOLOGY EFFECTS IN RELAXEDGE SI-GE(GRADED)/SI STRUCTURES/
Authors: SAMAVEDAM SB FITZGERALD EA
Citation: Sb. Samavedam et Ea. Fitzgerald, NOVEL DISLOCATION-STRUCTURE AND SURFACE-MORPHOLOGY EFFECTS IN RELAXEDGE SI-GE(GRADED)/SI STRUCTURES/, Journal of applied physics, 81(7), 1997, pp. 3108-3116
RELAXED TEMPLATE FOR FABRICATING REGULARLY DISTRIBUTED QUANTUM-DOT ARRAYS
Authors: XIE YH SAMAVEDAM SB BULSARA M LANGDO TA FITZGERALD EA
Citation: Yh. Xie et al., RELAXED TEMPLATE FOR FABRICATING REGULARLY DISTRIBUTED QUANTUM-DOT ARRAYS, Applied physics letters, 71(24), 1997, pp. 3567-3568
DEFECT STRUCTURES IN SILICON MERGED EPITAXIAL LATERAL OVERGROWTH
Authors: SAMAVEDAM SB KVAM EP KABIR AE NEUDECK GW
Citation: Sb. Samavedam et al., DEFECT STRUCTURES IN SILICON MERGED EPITAXIAL LATERAL OVERGROWTH, Journal of electronic materials, 24(11), 1995, pp. 1747-1751
DISLOCATIONS IN STRAINED LAYERS - THE GE-SI SYSTEM
Authors: KVAM EP SAMAVEDAM SB
Citation: Ep. Kvam et Sb. Samavedam, DISLOCATIONS IN STRAINED LAYERS - THE GE-SI SYSTEM, JOM, 46(3), 1994, pp. 47-51
Risultati: 1-11 |