Authors: GREKHOV IV VEKSLER MI IVANOV PA SAMSONOVA TP SHULEKIN AF

Citation: Iv. Grekhov et al., PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1024-1026

Authors: IVANOV PA IGNATEV KI PANTELEEV VN SAMSONOVA TP

Citation: Pa. Ivanov et al., DEEP SURFACE-STATES ON THE INTERFACE BETWEEN SIC AND ITS NATIVE THERMAL OXIDE, Technical physics letters, 23(10), 1997, pp. 798-800

Authors: IVANOV PA KONKOV OI PANTELEEV VN SAMSONOVA TP

Citation: Pa. Ivanov et al., INFLUENCE OF PLASMA TREATMENT OF THE SURFACE OF SILICON-CARBIDE ON THE CHARACTERISTICS OF BURIED-GATE JUNCTION FIELD-EFFECT TRANSISTORS, Semiconductors, 31(11), 1997, pp. 1212-1215

Authors: IVANOV PA PANTELEEV VN SAMSONOVA TP CHELNOKOV VE

Citation: Pa. Ivanov et al., STUDY OF SURFACE-STATES AT A SIO2-SIC INTERFACE THROUGH ANALYSIS OF THE INPUT ADMITTANCE OF AN MOS STRUCTURE OVER A BROAD TEMPERATURE-RANGE, Semiconductors, 29(2), 1995, pp. 135-137

Authors: IVANOV PA KONSTANTINOV AO PANTELEEV VN SAMSONOVA TP CHELNOKOV VE

Citation: Pa. Ivanov et al., CHARGE PROPERTIES OF AN AL-SIO2-N-6H-SIC((0001)SI) MOS STRUCTURE, Semiconductors, 28(7), 1994, pp. 668-672

Authors: IVANOV PA PANTELEEV VN SAMSONOVA TP SUVOROV AV CHELNOKOV VE

Citation: Pa. Ivanov et al., METAL-OXIDE-SEMICONDUCTOR CAPACITOR FORMED FROM THERMALLY OXIDIZED N-TYPE 6H-SIC WITH THE (000(1)OVER-BAR)C ORIENTATION, Semiconductors, 27(7), 1993, pp. 631-635