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Results: 1-8 |
Results: 8
ON THE MECHANISM OF BORON INCORPORATION DURING SILICON EPITAXY BY MEANS OF CHEMICAL-VAPOR-DEPOSITION
Authors: KUHNE H FISCHER A OZTURK MC SANGANERIA MK
Citation: H. Kuhne et al., ON THE MECHANISM OF BORON INCORPORATION DURING SILICON EPITAXY BY MEANS OF CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 143(2), 1996, pp. 634-639
ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ONTO (100)SILICON .1. THE INFLUENCE OF PREBAKE ON (EPITAXY SUBSTRATE) INTERFACIAL OXYGEN AND CARBON LEVELS
Authors: SANGANERIA MK OZTURK MC HARRIS G VIOLETTE KE BAN I LEE CA MAHER DM
Citation: Mk. Sanganeria et al., ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ONTO (100)SILICON .1. THE INFLUENCE OF PREBAKE ON (EPITAXY SUBSTRATE) INTERFACIAL OXYGEN AND CARBON LEVELS, Journal of the Electrochemical Society, 142(11), 1995, pp. 3961-3969
ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ON (100)SILICON .2. CARBON INCORPORATION INTO LAYERS AND AT INTERFACES OF MULTILAYER STRUCTURES
Authors: SANGANERIA MK OZTURK MC HARRIS G VIOLETTE KE LEE CA MAHER DM
Citation: Mk. Sanganeria et al., ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ON (100)SILICON .2. CARBON INCORPORATION INTO LAYERS AND AT INTERFACES OF MULTILAYER STRUCTURES, Journal of the Electrochemical Society, 142(11), 1995, pp. 3970-3974
BORON INCORPORATION IN EPITAXIAL SILICON USING SI2H6 AND B2H6 IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: SANGANERIA MK VIOLETTE KE OZTURK MC HARRIS G MAHER DM
Citation: Mk. Sanganeria et al., BORON INCORPORATION IN EPITAXIAL SILICON USING SI2H6 AND B2H6 IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of the Electrochemical Society, 142(1), 1995, pp. 285-289
HOW THERMAL BUDGET IN-SITU REMOVAL OF OXYGEN AND CARBON ON SILICON FOR SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: SANGANERIA MK OZTURK MC VIOLETTE KE HARRIS G LEE CA MAHER DM
Citation: Mk. Sanganeria et al., HOW THERMAL BUDGET IN-SITU REMOVAL OF OXYGEN AND CARBON ON SILICON FOR SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Applied physics letters, 66(10), 1995, pp. 1255-1257
LOW THERMAL BUDGET IN-SITU CLEANING AND PASSIVATION FOR SILICON EPITAXY IN A MULTICHAMBER RAPID THERMAL-PROCESSING CLUSTER TOOL
Authors: SANGANERIA MK VIOLETTE KE OZTURK MC HARRIS G LEE CA MAHER DM
Citation: Mk. Sanganeria et al., LOW THERMAL BUDGET IN-SITU CLEANING AND PASSIVATION FOR SILICON EPITAXY IN A MULTICHAMBER RAPID THERMAL-PROCESSING CLUSTER TOOL, Materials letters, 21(2), 1994, pp. 137-141
GROWTH-KINETICS, SILICON NUCLEATION ON SILICON DIOXIDE, AND SELECTIVEEPITAXY USING DISILANE AND HYDROGEN IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: VIOLETTE KE SANGANERIA MK OZTURK MC HARRIS G MAHER DM
Citation: Ke. Violette et al., GROWTH-KINETICS, SILICON NUCLEATION ON SILICON DIOXIDE, AND SELECTIVEEPITAXY USING DISILANE AND HYDROGEN IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of the Electrochemical Society, 141(11), 1994, pp. 3269-3273
LOW-TEMPERATURE SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR USING DISILANE
Authors: SANGANERIA MK VIOLETTE KE OZTURK MC
Citation: Mk. Sanganeria et al., LOW-TEMPERATURE SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR USING DISILANE, Applied physics letters, 63(9), 1993, pp. 1225-1227
Risultati: 1-8 |