AAAAAA
Results:
1-8
|
Results: 8
Authors:
SASAOKA C
SUNAKAWA H
KIMURA A
NIDO M
USUI A
SAKAI A
Citation: C. Sasaoka et al., HIGH-QUALITY INGAN MQW ON LOW-DISLOCATION-DENSITY GAN SUBSTRATE GROWNBY HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 190, 1998, pp. 61-66
Authors:
KURODA N
SASAOKA C
KIMURA A
USUI A
MOCHIZUKI Y
Citation: N. Kuroda et al., PRECISE CONTROL OF PN-JUNCTION PROFILES FOR GAN-BASED LD STRUCTURES USING GAN SUBSTRATES WITH LOW DISLOCATION DENSITIES, Journal of crystal growth, 190, 1998, pp. 551-555
Authors:
YAMAGUCHI AA
MOCHIZUKI Y
SASAOKA C
KIMURA A
NIDO M
USUI A
Citation: Aa. Yamaguchi et al., REFLECTANCE SPECTROSCOPY ON GAN FILMS UNDER UNIAXIAL-STRESS, Applied physics letters, 71(3), 1997, pp. 374-376
Authors:
SASAOKA C
USUI A
Citation: C. Sasaoka et A. Usui, SELF-LIMITING ADSORPTION OF THERMALLY CRACKED SICL2H2 ON SI SURFACES, Applied surface science, 82-3, 1994, pp. 348-353
Authors:
MOCHIZUKI Y
TAKADA T
SASAOKA C
USUI A
MIYOSHI E
SAKAI Y
Citation: Y. Mochizuki et al., THEORETICAL-STUDY OF AS2 DESORPTION FROM THE GA DANGLING-BOND SITE, Physical review. B, Condensed matter, 49(7), 1994, pp. 4658-4667
Authors:
MOCHIZUKI Y
TAKADA T
SAKUMA T
HANDA S
SASAOKA C
USUI A
Citation: Y. Mochizuki et al., THEORETICAL-STUDY OF THE CL DESORPTION REACTION INDUCED BY H-2 IN THECHLORIDE ATOMIC LAYER EPITAXY, Journal of crystal growth, 135(1-2), 1994, pp. 259-268
Authors:
SASAOKA C
KATO Y
USUI A
Citation: C. Sasaoka et al., ANOMALOUS AS DESORPTION FROM INAS(100) 2X4, Applied physics letters, 62(19), 1993, pp. 2338-2340
Authors:
SASAOKA C
KATO Y
USUI A
Citation: C. Sasaoka et al., TEMPERATURE PROGRAMMED DESORPTION STUDY OF GAAS(100)-C(4X4) AND AS4 EXPOSED (2X4) SURFACES, Surface science, 265(1-3), 1992, pp. 239-244
Risultati:
1-8
|