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Results:
1-12
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Results: 12
Authors:
FISCHER CB
SONTHEIMER D
SCHEFFER F
BAUER J
LINDERKAMP O
Citation: Cb. Fischer et al., CARDIORESPIRATORY STABILITY OF PREMATURE BOYS AND GIRLS DURING KANGAROO CARE, Early human development, 52(2), 1998, pp. 145-153
Authors:
KUNST G
SCHRECKENBERGER R
SCHEFFER F
LINDERKAMP O
DAUM R
MARTIN E
MOTSCH J
Citation: G. Kunst et al., APNEA IN PRETERM INFANTS AFTER HERNIOTOMY IN SPINAL-ANESTHESIA, British Journal of Anaesthesia, 76, 1996, pp. 314-314
Authors:
STUTE H
SCHEFFER F
LINDERKAMP O
Citation: H. Stute et al., PERTUSSIS - EFFECT ON APNEAS IN VERY YOUNG INFANTS, Pediatric research, 38(3), 1995, pp. 456-456
Authors:
PROST W
SCHEFFER F
LIU Q
LINDNER A
LAKNER H
GYURO I
TEGUDE FJ
Citation: W. Prost et al., METALORGANIC VAPOR-PHASE EPITAXIAL GROWN HETEROINTERFACES TO GAINP WITH GROUP-III AND GROUP-V EXCHANGE, Journal of crystal growth, 146(1-4), 1995, pp. 538-543
Authors:
LIU Q
DERKSEN S
LINDER A
SCHEFFER F
PROST W
TEGUDE FJ
Citation: Q. Liu et al., EVIDENCE OF TYPE-II BAND ALIGNMENT AT THE ORDERED GAINP TO GAAS HETEROINTERFACE, Journal of applied physics, 77(3), 1995, pp. 1154-1158
Authors:
SONTHEIMER D
FISCHER CB
SCHEFFER F
KAEMPF D
LINDERKAMP O
Citation: D. Sontheimer et al., PITFALLS IN RESPIRATORY MONITORING OF PREMATURE-INFANTS DURING KANGAROO CARE, Archives of Disease in Childhood, 72(2), 1995, pp. 115-117
Authors:
LIU Q
SCHEFFER F
LINDNER A
LAKNER H
PROST W
TEGUDE FJ
Citation: Q. Liu et al., X-RAY CHARACTERIZATION OF VERY THIN GAXIN1-XP (X-APPROXIMATE-TO-0.5) LAYERS GROWN ON INP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 188-192
Authors:
SCHEFFER F
LINDNER A
LIU Q
HEEDT C
REUTER R
PROST W
LAKNER H
TEGUDE FJ
Citation: F. Scheffer et al., HIGHLY STRAINED IN0.5GA0.5P AS WIDE-GAP MATERIAL ON INP SUBSTRATE FORHETEROJUNCTION FIELD-EFFECT TRANSISTOR APPLICATION, Journal of crystal growth, 145(1-4), 1994, pp. 326-331
Authors:
LINDNER A
LIU Q
SCHEFFER F
HAASE M
PROST W
TEGUDE FJ
Citation: A. Lindner et al., LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INAS GAAS SHORT-PERIOD SUPERLATTICES ON INP SUBSTRATES/, Journal of crystal growth, 145(1-4), 1994, pp. 771-777
Authors:
LIU Q
LINDNER A
SCHEFFER F
PROST W
TEGUDE FJ
Citation: Q. Liu et al., X-RAY-DIFFRACTION CHARACTERIZATION OF HIGHLY STRAINED INAS AND GAAS-LAYERS ON INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 75(5), 1994, pp. 2426-2433
Authors:
SCHEFFER F
HEEDT C
REUTER R
LINDNER A
LIU Q
PROST W
TEGUDE FJ
Citation: F. Scheffer et al., HIGH BREAKDOWN VOLTAGE INGAAS INALAS HFET USING IN0.5GA0.5P SPACER LAYER/, Electronics Letters, 30(2), 1994, pp. 169-170
Authors:
LIU Q
QUEDEWEIT U
SCHEFFER F
LINDNER A
PROST W
TEGUDE FJ
Citation: Q. Liu et al., EFFECTS OF DEEP LEVELS AND SI-DOPING ON GAINP MATERIAL PROPERTIES INVESTIGATED BY MEANS OF OPTICAL METHODS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 181-184
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1-12
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