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Results: 1-10 |
Results: 10
ON THE USE OF SURFACTANTS IN THE ELECTROCHEMICAL PREPARATION OF POROUS SILICON
Authors: SOTGIU G SCHIRONE L RALLO F
Citation: G. Sotgiu et al., ON THE USE OF SURFACTANTS IN THE ELECTROCHEMICAL PREPARATION OF POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 18-21
CHEMICALLY ETCHED POROUS SILICON AS AN ANTIREFLECTION COATING FOR HIGH-EFFICIENCY SOLAR-CELLS
Authors: SCHIRONE L SOTGIU G CALIFANO FP
Citation: L. Schirone et al., CHEMICALLY ETCHED POROUS SILICON AS AN ANTIREFLECTION COATING FOR HIGH-EFFICIENCY SOLAR-CELLS, Thin solid films, 297(1-2), 1997, pp. 296-298
EFFECT OF SURFACTANTS IN THE ELECTROCHEMICAL PREPARATION OF POROUS SILICON
Authors: SOTGIU G SCHIRONE L RALLO F
Citation: G. Sotgiu et al., EFFECT OF SURFACTANTS IN THE ELECTROCHEMICAL PREPARATION OF POROUS SILICON, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1179-1186
POROUS-SILICON COATINGS FOR PHOTOVOLTAIC DEVICES
Authors: SCHIRONE L SOTGIU G RALLO F CALIFANO FP
Citation: L. Schirone et al., POROUS-SILICON COATINGS FOR PHOTOVOLTAIC DEVICES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1225-1232
REACTIVE ION ETCHING CHARACTERIZATION OF A-SIC-H IN CF4 O-2 PLASMA/
Authors: SAGGIO G VERONA E DIROSA P LAMONICA S SALOTTI R SCHIRONE L
Citation: G. Saggio et al., REACTIVE ION ETCHING CHARACTERIZATION OF A-SIC-H IN CF4 O-2 PLASMA/, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 176-180
POROUS SILICON OBTAINED BY ANODIZATION IN THE TRANSITION REGIME
Authors: BERTOLOTTI M FAZIO E FERRARI A LAMONICA S LAZAROUK S LIAKHOU G MAIELLO G PROVERBIO E SCHIRONE L CARASSITI F
Citation: M. Bertolotti et al., POROUS SILICON OBTAINED BY ANODIZATION IN THE TRANSITION REGIME, Thin solid films, 255(1-2), 1995, pp. 152-154
ONE-STEP IN-DIFFUSION AS A RESULT OF MULTIPULSE LASER IRRADIATION OF LINBO3 SINGLE-CRYSTALLINE SUBSTRATES COVERED WITH THIN TI DEPOSITS - ON THE EFFECT OF THE RADIATION WAVELENGTH
Authors: FERRARI A SCHIRONE L MAIELLO G DECESARE C CARASSITTI F BERTOLOTTI M CAPONERO MA LUCHES A MARTINO M DINESCU M CHITICA N MIHAILESCU IN URSU I
Citation: A. Ferrari et al., ONE-STEP IN-DIFFUSION AS A RESULT OF MULTIPULSE LASER IRRADIATION OF LINBO3 SINGLE-CRYSTALLINE SUBSTRATES COVERED WITH THIN TI DEPOSITS - ON THE EFFECT OF THE RADIATION WAVELENGTH, J. mod. opt., 40(6), 1993, pp. 1043-1052
THE CONDUCTIVITY PECULIARITIES IN A-SI-H FILMS
Authors: GUSEINOV YY SCHIRONE L FERRARI A CALIFANO FP VIDADI YA
Citation: Yy. Guseinov et al., THE CONDUCTIVITY PECULIARITIES IN A-SI-H FILMS, Physica status solidi. a, Applied research, 137(1), 1993, pp. 13-16
2-DIMENSIONAL IMAGE SENSORS BASED ON AMORPHOUS-SILICON ALLOY P-I-N-DIODES
Authors: DECESARE G DIROSA P LAMONICA S SALOTTI R SCHIRONE L SAGGIO G VERONA E
Citation: G. Decesare et al., 2-DIMENSIONAL IMAGE SENSORS BASED ON AMORPHOUS-SILICON ALLOY P-I-N-DIODES, Journal of non-crystalline solids, 166, 1993, pp. 789-792
EVIDENCE OF REFRACTIVE-INDEX CHANGE BY TI INDIFFUSION INTO LINBO3 SUBSTRATE AS A RESULT OF MULTIPULSE FREE-RUNNING RUBY-LASER IRRADIATION
Authors: DINESCU M CHITICA N TIMUS C MIHAILESCU IN ANDREI A MAIELLO G SCHIRONE L FERRARI A BERTOLOTTI M
Citation: M. Dinescu et al., EVIDENCE OF REFRACTIVE-INDEX CHANGE BY TI INDIFFUSION INTO LINBO3 SUBSTRATE AS A RESULT OF MULTIPULSE FREE-RUNNING RUBY-LASER IRRADIATION, Journal of applied physics, 74(1), 1993, pp. 24-30
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