Citation: W. Passenberg et W. Schlaak, SURFACE PREPARATION FOR MOLECULAR-BEAM EPITAXY-REGROWTH ON METALORGANIC VAPOR-PHASE EPITAXY-GROWN INP AND INGAASP LAYERS, Journal of crystal growth, 173(3-4), 1997, pp. 266-270
Authors:
VANWAASEN S
UMBACH A
AUER U
BACH HG
BERTENBURG RM
JANSSEN G
MEKONNEN GG
PASSENBERG W
REUTER R
SCHLAAK W
SCHRAMM C
UNTERBORSCH G
WOLFRAM P
TEGUDE FJ
Citation: S. Vanwaasen et al., 27-GHZ BANDWIDTH HIGH-SPEED MONOLITHIC INTEGRATED OPTOELECTRONIC PHOTORECEIVER CONSISTING OF A WAVE-GUIDE FED PHOTODIODE AND AN INALAS INGAAS-HFET TRAVELING-WAVE AMPLIFIER/, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1394-1401
Authors:
UMBACH A
VANWAASEN S
AUER U
BACH HG
BERTENBURG RM
BREUER V
EBERT W
JANSSEN G
MEKONNEN GG
PASSENBERG W
SCHLAAK W
SCHRAMM C
SEEGER A
TEGUDE FJ
UNTERBORSCH G
Citation: A. Umbach et al., MONOLITHIC PIN-HEMT 1.55-MU-M PHOTORECEIVER ON INP WITH 27 GHZ BANDWIDTH, Electronics Letters, 32(23), 1996, pp. 2142-2143
Authors:
SCHRAMM C
SCHLAAK W
MEKONNEN GG
PASSENBERG W
UMBACH A
SEEGER A
WOLFRAM P
BACH HG
Citation: C. Schramm et al., DESIGN AND REALIZATION OF WAVE-GUIDE INTEGRATED ALINAS GAINAS HEMTS REGROWN BY MBE FOR HIGH BIT-RATE OPTOELECTRONIC RECEIVERS ON INP/, Electronics Letters, 32(12), 1996, pp. 1139-1141