ACNP - Italian Periodicals Catalogue

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Results: 1-13 |

Results: 13

SIGEC - BAND-GAPS, BAND OFFSETS, OPTICAL-PROPERTIES, AND POTENTIAL APPLICATIONS

Authors: BRUNNER K SCHMIDT OG WINTER W EBERL K GLUCK M KONIG U

Citation: K. Brunner et al., SIGEC - BAND-GAPS, BAND OFFSETS, OPTICAL-PROPERTIES, AND POTENTIAL APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1701-1706

INFLUENCE OF PRE-GROWN CARBON ON THE FORMATION OF GERMANIUM DOTS

Authors: SCHMIDT OG LANGE C EBERL K KIENZLE O ERNST F

Citation: Og. Schmidt et al., INFLUENCE OF PRE-GROWN CARBON ON THE FORMATION OF GERMANIUM DOTS, Thin solid films, 321, 1998, pp. 70-75

CHARACTERIZATION OF SELF-ASSEMBLED GE ISLANDS ON SI(100) BY ATOMIC-FORCE MICROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY

Authors: WOHL G SCHOLLHORN C SCHMIDT OG BRUNNER K EBERL K KIENZLE O ERNST F

Citation: G. Wohl et al., CHARACTERIZATION OF SELF-ASSEMBLED GE ISLANDS ON SI(100) BY ATOMIC-FORCE MICROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY, Thin solid films, 321, 1998, pp. 86-91

FORMATION AND OPTICAL-PROPERTIES OF CARBON-INDUCED GE DOTS

Authors: EBERL K SCHMIDT OG SCHIEKER S JINPHILLIPP NY PHILLIPP F

Citation: K. Eberl et al., FORMATION AND OPTICAL-PROPERTIES OF CARBON-INDUCED GE DOTS, Solid-state electronics, 42(7-8), 1998, pp. 1593-1597

PHOTOLUMINESCENCE OF TENSILE-STRAINED, EXACTLY STRAIN COMPENSATED, AND COMPRESSIVELY STRAINED SI1-X-YGEXCY LAYERS ON SI

Authors: SCHMIDT OG EBERL K

Citation: Og. Schmidt et K. Eberl, PHOTOLUMINESCENCE OF TENSILE-STRAINED, EXACTLY STRAIN COMPENSATED, AND COMPRESSIVELY STRAINED SI1-X-YGEXCY LAYERS ON SI, Physical review letters, 80(15), 1998, pp. 3396-3399

CARBON-INDUCED GERMANIUM DOTS - KINETICALLY-LIMITED ISLANDING PROCESSPREVENTS COHERENT VERTICAL ALIGNMENT

Authors: SCHMIDT OG SCHIEKER S EBERL K KIENZLE O ERNST F

Citation: Og. Schmidt et al., CARBON-INDUCED GERMANIUM DOTS - KINETICALLY-LIMITED ISLANDING PROCESSPREVENTS COHERENT VERTICAL ALIGNMENT, Applied physics letters, 73(5), 1998, pp. 659-661

PHOTOLUMINESCENCE AND BAND-EDGE ALIGNMENT OF C-INDUCED GE ISLANDS ANDRELATED SIGEC STRUCTURES

Authors: SCHMIDT OG EBERL K

Citation: Og. Schmidt et K. Eberl, PHOTOLUMINESCENCE AND BAND-EDGE ALIGNMENT OF C-INDUCED GE ISLANDS ANDRELATED SIGEC STRUCTURES, Applied physics letters, 73(19), 1998, pp. 2790-2792

ANNEALING EFFECTS ON CARBON-INDUCED GERMANIUM DOTS IN SILICON

Authors: SCHIEKER S SCHMIDT OG EBERL K JINPHILLIPP NY PHILLIPP F

Citation: S. Schieker et al., ANNEALING EFFECTS ON CARBON-INDUCED GERMANIUM DOTS IN SILICON, Applied physics letters, 72(25), 1998, pp. 3344-3346

FORMATION OF CARBON-INDUCED GERMANIUM DOTS

Authors: SCHMIDT OG LANGE C EBERL K KIENZLE O ERNST F

Citation: Og. Schmidt et al., FORMATION OF CARBON-INDUCED GERMANIUM DOTS, Applied physics letters, 71(16), 1997, pp. 2340-2342

INAS-GAAS QUANTUM PYRAMID LASERS - IN-SITU GROWTH, RADIATIVE LIFETIMES AND POLARIZATION PROPERTIES

Authors: BIMBERG D LEDENTSOV NN GRUNDMANN M KIRSTAEDTER N SCHMIDT OG MAO MH USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS ALFEROV ZI RUVIMOV SS GOSELE U HEYDENREICH J

Citation: D. Bimberg et al., INAS-GAAS QUANTUM PYRAMID LASERS - IN-SITU GROWTH, RADIATIVE LIFETIMES AND POLARIZATION PROPERTIES, JPN J A P 1, 35(2B), 1996, pp. 1311-1319

INAS-GAAS QUANTUM DOTS - FROM GROWTH TO LASERS

Authors: BIMBERG D LEDENTSOV NN GRUNDMANN M KIRSTAEDTER N SCHMIDT OG MAO MH USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS ALFEROV ZI RUVIMOV SS GOSELE U HEYDENREICH J

Citation: D. Bimberg et al., INAS-GAAS QUANTUM DOTS - FROM GROWTH TO LASERS, Physica status solidi. b, Basic research, 194(1), 1996, pp. 159-173

PREVENTION OF GAIN SATURATION BY MULTILAYER QUANTUM-DOT LASERS

Authors: SCHMIDT OG KIRSTAEDTER N LEDENTSOV NN MAO MH BIMBERG D USTINOV VM EGOROV AY ZHUKOV AE MAXIMOV MV KOPEV PS ALFEROV ZI

Citation: Og. Schmidt et al., PREVENTION OF GAIN SATURATION BY MULTILAYER QUANTUM-DOT LASERS, Electronics Letters, 32(14), 1996, pp. 1302-1304

GAIN AND DIFFERENTIAL GAIN OF SINGLE-LAYER INAS GAAS QUANTUM-DOT INJECTION-LASERS/

Authors: KIRSTAEDTER N SCHMIDT OG LEDENTSOV NN BIMBERG D USTINOV VM EGOROV AY ZHUKOV AE MAXIMOV MV KOPEV PS ALFEROV ZI

Citation: N. Kirstaedter et al., GAIN AND DIFFERENTIAL GAIN OF SINGLE-LAYER INAS GAAS QUANTUM-DOT INJECTION-LASERS/, Applied physics letters, 69(9), 1996, pp. 1226-1228

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