Authors: PETRESCU V MOUTHAAN AJ SCHOENMAKER W SALM C

Citation: V. Petrescu et al., MECHANICAL-STRESS EVOLUTION AND THE BLECH LENGTH - 2D SIMULATION OF EARLY ELECTROMIGRATION EFFECTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1047-1050

Authors: PETRESCU V MOUTHAAN AJ SCHOENMAKER W

Citation: V. Petrescu et al., EARLY RESISTANCE CHANGE AND STRESS ELECTROMIGRATION MODELING IN ALUMINUM INTERCONNECTS/, Microelectronics and reliability, 37(10-11), 1997, pp. 1491-1494

Authors: RUDAN M VECCHI MC VONSCHWERIN A SCHOENMAKER W DEKEERSGIETER A MCCARTHY K MATHEWSON A KLAASSEN DBM OTTEN JAM JONES SK METCALFE JG

Citation: M. Rudan et al., DEVICE MODELING IN THE FRAME OF PROJECT ADEQUAT, Microelectronic engineering, 34(1), 1996, pp. 67-84

Authors: VANKEMMEL R SCHOENMAKER W DEMEYER K

Citation: R. Vankemmel et al., A NEW FINITE-ELEMENT DISCRETIZATION TECHNIQUE FOR THE HYDRODYNAMIC FORMULATION OF ENERGY-BALANCE EQUATIONS, Compel, 13(3), 1994, pp. 531-551

Authors: VANKEMMEL RC SCHOENMAKER W CARTUYVELS R DEMEYER KM

Citation: Rc. Vankemmel et al., SCALING CONSIDERATIONS OF THE CONSTITUTIVE-EQUATIONS IN A 2-D FINITE-ELEMENT HETEROJUNCTION SIMULATOR PRISM, IEEE transactions on computer-aided design of integrated circuits and systems, 12(11), 1993, pp. 1786-1797

Authors: VANKEMMEL R SCHOENMAKER W DEMEYER K

Citation: R. Vankemmel et al., A UNIFIED WIDE TEMPERATURE-RANGE MODEL FOR THE ENERGY-GAP, THE EFFECTIVE CARRIER MASS AND INTRINSIC CONCENTRATION IN SILICON, Solid-state electronics, 36(10), 1993, pp. 1379-1384