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Results:
1-23
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Results: 23
Authors:
HABERMANN T
GOHL A
NAU D
WEDEL M
MULLER G
CHRIST M
SCHRECK M
STRITZKER B
Citation: T. Habermann et al., MODIFYING CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS FOR FIELD-EMISSION DISPLAYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 693-696
Authors:
HARTMANN J
SCHRECK M
BAUR T
HUBER H
ASSMANN W
SCHULER H
STRITZKER B
RAUSCHENBACH B
Citation: J. Hartmann et al., INCORPORATION OF NITROGEN INTO CARBON-FILMS PRODUCED BY PECVD UNDER BIAS VOLTAGE, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 899-902
Authors:
SCHRECK M
BAUR T
FEHLING R
MULLER M
STRITZKER B
BERGMAIER A
DOLLINGER G
Citation: M. Schreck et al., MODIFICATION OF DIAMOND FILM GROWTH BY A NEGATIVE BIAS VOLTAGE IN MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 293-298
Authors:
GOHL A
HABERMANN T
MULLER G
NAU D
WEDEL M
CHRIST M
SCHRECK M
STRITZKER B
Citation: A. Gohl et al., INFLUENCE OF STRUCTURAL AND MORPHOLOGICAL PROPERTIES ON THE INTRINSICFIELD-EMISSION OF CVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 666-670
Authors:
SCHRECK M
NISHIGAKI M
GLASER HR
CHRISTOPH G
GROSSWIG S
HURTIG E
KASCH M
KUHN K
Citation: M. Schreck et al., DETERMINATION OF HEAT-PRODUCTION ZONES AT OPEN-CAST MINE DUMP, Journal of environmental engineering, 124(7), 1998, pp. 646-651
Authors:
THURER KH
SCHRECK M
STRITZKER B
Citation: Kh. Thurer et al., LIMITING PROCESSES FOR DIAMOND EPITAXIAL ALIGNMENT ON SILICON, Physical review. B, Condensed matter, 57(24), 1998, pp. 15454-15464
Authors:
THURER KH
SCHRECK M
STRITZKER B
FUCHS N
PONGRATZ P
Citation: Kh. Thurer et al., GROWTH AND DEFECTS OF DIAMOND FACETS UNDER NEGATIVE BIASING CONDITIONS IN A MICROWAVE PLASMA CVD PROCESS, DIAMOND AND RELATED MATERIALS, 6(8), 1997, pp. 1010-1014
Authors:
WURZINGER P
FUCHS N
PONGRATZ P
SCHRECK M
HESSMER R
STRITZKER B
Citation: P. Wurzinger et al., TEM INVESTIGATIONS ON THE HETEROEPITAXIAL NUCLEATION OF CVD DIAMOND ON (001)-SILICON SUBSTRATES, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 752-757
Authors:
CREMADES A
PIQUERAS J
SCHRECK M
Citation: A. Cremades et al., ELECTRON-BEAM-INDUCED CURRENT IMAGING OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 6(1), 1997, pp. 95-98
Authors:
SCHRECK M
THURER KH
STRITZKER B
Citation: M. Schreck et al., LIMITATIONS OF THE PROCESS WINDOW FOR THE BIAS ENHANCED NUCLEATION OFHETEROEPITAXIAL DIAMOND FILMS ON SILICON IN THE TIME-DOMAIN, Journal of applied physics, 81(7), 1997, pp. 3092-3095
Authors:
SCHRECK M
THURER KH
KLARMANN R
STRITZKER B
Citation: M. Schreck et al., INFLUENCE OF THE NUCLEATION PROCESS ON THE AZIMUTHAL MISORIENTATION OF HETEROEPITAXIAL DIAMOND FILMS ON SI(001), Journal of applied physics, 81(7), 1997, pp. 3096-3102
Authors:
KLARMANN R
SCHRECK M
HESSMER R
STRITZKER B
Citation: R. Klarmann et al., AFM STUDY ON THE NONMONOTONIC TEXTURE EVOLUTION OF HETEROEPITAXIALLY NUCLEATED DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 266-271
Authors:
SCHRECK M
STRITZKER B
Citation: M. Schreck et B. Stritzker, NUCLEATION AND GROWTH OF HETEROEPITAXIAL DIAMOND FILMS ON SILICON, Physica status solidi. a, Applied research, 154(1), 1996, pp. 197-217
Authors:
GEIER S
HESSMER R
PRECKWINKEL U
SCHWEITZER D
SCHRECK M
RAUSCHENBACH B
Citation: S. Geier et al., STUDY OF THE INITIAL GROWTH-PHASE OF CHEMICAL-VAPOR-DEPOSITED DIAMONDON SILICON(001) BY SYNCHROTRON-RADIATION, Journal of applied physics, 79(4), 1996, pp. 1907-1910
Authors:
SCHRECK M
BAUR T
STRITZKER B
Citation: M. Schreck et al., OPTICAL CHARACTERIZATION OF THE CATHODE PLASMA SHEATH DURING THE BIASING STEP FOR DIAMOND NUCLEATION ON SILICON, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 553-558
Authors:
HESSMER R
SCHRECK M
GEIER S
RAUSCHENBACH B
STRITZKER B
Citation: R. Hessmer et al., THE INFLUENCE OF THE GROWTH-PROCESS ON THE FILM TEXTURE OF EPITAXIALLY NUCLEATED DIAMOND ON SILICON(001), DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 410-415
Authors:
HESSMER R
SCHRECK M
STRITZKER B
Citation: R. Hessmer et al., INDICATIONS OF NONMONOTONIC TEXTURE EVOLUTION FROM A 2-DIMENSIONAL SIMULATION STUDY, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 416-418
Authors:
SCHRECK M
Citation: M. Schreck, BALANCING THE RIGHT TO PRAY AT GRADUATION AND THE RESPONSIBILITY OF DISESTABLISHMENT, Temple law review, 68(4), 1995, pp. 1869-1895
Authors:
WROBLEWSKI T
GEIER S
HESSMER R
SCHRECK M
RAUSCHENBACH B
Citation: T. Wroblewski et al., X-RAY-IMAGING OF POLYCRYSTALLINE MATERIALS, Review of scientific instruments, 66(6), 1995, pp. 3560-3562
Authors:
HELMING K
GEIER S
SCHRECK M
HESSMER R
STRITZKER B
RAUSCHENBACH B
Citation: K. Helming et al., TEXTURE ANALYSIS OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS ON SILICONBY THE COMPONENT METHOD, Journal of applied physics, 77(9), 1995, pp. 4765-4770
Authors:
SCHRECK M
HESSMER R
GEIER S
RAUSCHENBACH B
STRITZKER B
Citation: M. Schreck et al., STRUCTURAL CHARACTERIZATION OF DIAMOND FILMS GROWN EPITAXIALLY ON SILICON, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 510-514
Authors:
HESSMER R
SCHRECK M
GEIER S
STRITZKER B
Citation: R. Hessmer et al., CORRELATION BETWEEN BREAKDOWN VOLTAGE AND STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE AND HETEROEPITAXIAL CVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 951-956
Authors:
GEIER S
SCHRECK M
HESSMER R
RAUSCHENBACH B
STRITZKER B
KUNZE K
ADAMS BL
Citation: S. Geier et al., CHARACTERIZATION OF THE NEAR-INTERFACE REGION OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS ON SILICON BY BACKSCATTER KIKUCHI DIFFRACTION, Applied physics letters, 65(14), 1994, pp. 1781-1783
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