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Results: 1-8 |
Results: 8
A NEW METHOD FOR MEASURING THE SATURATION VELOCITY OF SUBMICRON CMOS TRANSISTORS
Authors: SCHREUTELKAMP RJ DEFERM L
Citation: Rj. Schreutelkamp et L. Deferm, A NEW METHOD FOR MEASURING THE SATURATION VELOCITY OF SUBMICRON CMOS TRANSISTORS, Solid-state electronics, 38(4), 1995, pp. 791-793
IMPACT OF SILICIDATION ON THE EXCESS NOISE BEHAVIOR OF MOS-TRANSISTORS
Authors: VANDAMME EP VANDAMME LKJ CLAEYS C SIMOEN E SCHREUTELKAMP RJ
Citation: Ep. Vandamme et al., IMPACT OF SILICIDATION ON THE EXCESS NOISE BEHAVIOR OF MOS-TRANSISTORS, Solid-state electronics, 38(11), 1995, pp. 1893-1897
NONDESTRUCTIVE CHARACTERIZATION OF THE UNIFORMITY OF THIN COBALT DISILICIDE FILMS BY RAMAN MICROPROBE MEASUREMENTS
Authors: PEREZRODRIGUEZ A ROCA E JAWHARI T MORANTE JR SCHREUTELKAMP RJ
Citation: A. Perezrodriguez et al., NONDESTRUCTIVE CHARACTERIZATION OF THE UNIFORMITY OF THIN COBALT DISILICIDE FILMS BY RAMAN MICROPROBE MEASUREMENTS, Thin solid films, 251(1), 1994, pp. 45-50
NONDESTRUCTIVE THICKNESS DETERMINATION OF THIN COBALT AND COBALT DISILICIDE LAYERS ON SILICON SUBSTRATES
Authors: ROCA E VANHELLEMONT J SCHREUTELKAMP RJ VERMEIREN J
Citation: E. Roca et al., NONDESTRUCTIVE THICKNESS DETERMINATION OF THIN COBALT AND COBALT DISILICIDE LAYERS ON SILICON SUBSTRATES, Thin solid films, 240(1-2), 1994, pp. 110-113
FORMATION OF ULTRATHIN COSI2 FILMS USING A 2-STEP LIMITED REACTION PROCESS
Authors: SCHREUTELKAMP RJ COPPYE W DEBOSSCHER W VANMEIRHAEGHE R VANMEIRHAEGHE L VANHELLEMONT J DEWEERDT B LAUWERS A MAEX K
Citation: Rj. Schreutelkamp et al., FORMATION OF ULTRATHIN COSI2 FILMS USING A 2-STEP LIMITED REACTION PROCESS, Journal of materials research, 8(12), 1993, pp. 3111-3121
TECHNOLOGICAL ASPECTS OF EPITAXIAL COSI2, LAYERS FOR CMOS
Authors: LAUWERS A SCHREUTELKAMP RJ BRIJS B BENDER H MAEX K
Citation: A. Lauwers et al., TECHNOLOGICAL ASPECTS OF EPITAXIAL COSI2, LAYERS FOR CMOS, Applied surface science, 73, 1993, pp. 19-24
2-STEP ANNEALS TO AVOID BRIDGING DURING CO SILICIDATION
Authors: SCHREUTELKAMP RJ VANDENABEELE P DEWEERDT B VERBEECK R MAEX K
Citation: Rj. Schreutelkamp et al., 2-STEP ANNEALS TO AVOID BRIDGING DURING CO SILICIDATION, Applied surface science, 73, 1993, pp. 162-166
ELECTRICALLY ACTIVE, ION-IMPLANTED BORON AT THE SOLUBILITY LIMIT IN SILICON
Authors: LIEFTING JR SCHREUTELKAMP RJ VANHELLEMONT J VANDERVORST W MAEX K CUSTER JS SARIS FW
Citation: Jr. Liefting et al., ELECTRICALLY ACTIVE, ION-IMPLANTED BORON AT THE SOLUBILITY LIMIT IN SILICON, Applied physics letters, 63(8), 1993, pp. 1134-1136
Risultati: 1-8 |