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Results: 1-13 |
Results: 13
SUPPRESSION OF THE LOCALIZATION IN THE 2-DIMENSIONAL CONDUCTIVITY OF SI-DELTA-DOPED GAAS BY MN CO-DOPING
Authors: FRIEDLAND KJ SHLIMAK IS SCHUTZENDUBE P
Citation: Kj. Friedland et al., SUPPRESSION OF THE LOCALIZATION IN THE 2-DIMENSIONAL CONDUCTIVITY OF SI-DELTA-DOPED GAAS BY MN CO-DOPING, Physica. B, Condensed matter, 251, 1998, pp. 758-761
IMPROVED ACCURACY IN MONITORING SI MONOLAYER INCORPORATION IN GAAS DURING MOLECULAR-BEAM EPITAXY
Authors: DAWERITZ L SCHUTZENDUBE P REICHE M PLOOG KH
Citation: L. Daweritz et al., IMPROVED ACCURACY IN MONITORING SI MONOLAYER INCORPORATION IN GAAS DURING MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1969-1975
REAL-TIME ANALYSIS OF SI MONOLAYER FORMATION ON GAAS(001) DURING MBE
Authors: DAWERITZ L SCHUTZENDUBE P REICHE M PLOOG KH
Citation: L. Daweritz et al., REAL-TIME ANALYSIS OF SI MONOLAYER FORMATION ON GAAS(001) DURING MBE, Surface science, 404(1-3), 1998, pp. 257-262
ATOMIC CONFIGURATIONS DURING SI INCORPORATION ON GAAS(001) IN AS ATMOSPHERE EVIDENCED BY REFLECTANCE DIFFERENCE SPECTROSCOPY
Authors: DAWERITZ L SCHUTZENDUBE P REICHE M PLOOG KH
Citation: L. Daweritz et al., ATOMIC CONFIGURATIONS DURING SI INCORPORATION ON GAAS(001) IN AS ATMOSPHERE EVIDENCED BY REFLECTANCE DIFFERENCE SPECTROSCOPY, Surface science, 385(1), 1997, pp. 917-921
DOES SCANNING-TUNNELING-MICROSCOPY PROVIDE A REALISTIC PICTURE OF THESTEP ARRAY OF VICINAL GAAS(001) SURFACES GROWN AT HIGH-TEMPERATURE
Authors: DAWERITZ L NORENBERG H SCHUTZENDUBE P PLOOG KH
Citation: L. Daweritz et al., DOES SCANNING-TUNNELING-MICROSCOPY PROVIDE A REALISTIC PICTURE OF THESTEP ARRAY OF VICINAL GAAS(001) SURFACES GROWN AT HIGH-TEMPERATURE, Journal of crystal growth, 175, 1997, pp. 1309-1315
EVOLUTION OF SHORT-RANGE AND LONG-RANGE ORDER DURING SI INCORPORATIONON GAAS(001) OBSERVED BY RAS AND RHEED DURING MBE
Authors: DAWERITZ L STAHRENBERG K SCHUTZENDUBE P ZETTLER JT RICHTER W PLOOG KH
Citation: L. Daweritz et al., EVOLUTION OF SHORT-RANGE AND LONG-RANGE ORDER DURING SI INCORPORATIONON GAAS(001) OBSERVED BY RAS AND RHEED DURING MBE, Journal of crystal growth, 175, 1997, pp. 310-316
SURFACE EVOLUTION ON VICINAL GAAS(001) SURFACES IN THE TRANSITION RANGE FROM 2-DIMENSIONAL TO STEP-FLOW GROWTH
Authors: NORENBERG H DAWERITZ L SCHUTZENDUBE P PLOOG K
Citation: H. Norenberg et al., SURFACE EVOLUTION ON VICINAL GAAS(001) SURFACES IN THE TRANSITION RANGE FROM 2-DIMENSIONAL TO STEP-FLOW GROWTH, Journal of applied physics, 81(6), 1997, pp. 2611-2620
TAILORING OF SI DOPING LAYERS IN GAAS DURING MOLECULAR-BEAM EPITAXY
Authors: DAWERITZ L KOSTIAL H RAMSTEINER M KLANN R SCHUTZENDUBE P STAHRENBERG K BEHREND J HEY R MAIER M PLOOG K
Citation: L. Daweritz et al., TAILORING OF SI DOPING LAYERS IN GAAS DURING MOLECULAR-BEAM EPITAXY, Physica status solidi. b, Basic research, 194(1), 1996, pp. 127-144
SURFACE PROCESSES RESPONSIBLE FOR REFLECTANCE-ANISOTROPY OSCILLATIONSDURING MOLECULAR-BEAM EPITAXY GROWTH OF GAAS(001)
Authors: RUMBERG J ZETTLER JT STAHRENBERG K PLOSKA K RICHTER W DAWERITZ L SCHUTZENDUBE P WASSERMEIER M
Citation: J. Rumberg et al., SURFACE PROCESSES RESPONSIBLE FOR REFLECTANCE-ANISOTROPY OSCILLATIONSDURING MOLECULAR-BEAM EPITAXY GROWTH OF GAAS(001), Surface science, 337(1-2), 1995, pp. 103-108
REFLECTANCE ANISOTROPY OSCILLATIONS DURING MOCVD AND MBE GROWTH OF GAAS(001)
Authors: ZETTLER JT RUMBERG J PLOSKA K STAHRENBERG K PRISTOVSEK M RICHTER W WASSERMEIER M SCHUTZENDUBE P BEHREND J DAWERITZ L
Citation: Jt. Zettler et al., REFLECTANCE ANISOTROPY OSCILLATIONS DURING MOCVD AND MBE GROWTH OF GAAS(001), Physica status solidi. a, Applied research, 152(1), 1995, pp. 35-47
90-DEGREES DOUBLE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION EXPERIMENTS ON VICINAL SURFACES OF GAAS
Authors: NORENBERG H DAWERITZ L SCHUTZENDUBE P SCHONHERR HP PLOOG K
Citation: H. Norenberg et al., 90-DEGREES DOUBLE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION EXPERIMENTS ON VICINAL SURFACES OF GAAS, Journal of crystal growth, 150(1-4), 1995, pp. 81-84
DECORATION PHENOMENA DURING PLANAR DOPING OF GAAS WITH SI AND EFFECTSON MAGNETOTRANSPORT
Authors: DAWERITZ L FRIEDLAND KJ BEHREND J SCHUTZENDUBE P
Citation: L. Daweritz et al., DECORATION PHENOMENA DURING PLANAR DOPING OF GAAS WITH SI AND EFFECTSON MAGNETOTRANSPORT, Physica status solidi. a, Applied research, 146(1), 1994, pp. 277-288
SELF-ORGANIZATION DURING SI INCORPORATION IN MBE-GROWN VICINAL GAAS(001) SURFACES
Authors: DAWERITZ L HAGENSTEIN K SCHUTZENDUBE P
Citation: L. Daweritz et al., SELF-ORGANIZATION DURING SI INCORPORATION IN MBE-GROWN VICINAL GAAS(001) SURFACES, Journal of crystal growth, 127(1-4), 1993, pp. 1051-1055
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