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Results: 1-25 | 26-31 |
Results: 26-31/31
EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES
Authors: FLEETWOOD DM WINOKUR PS REBER RA MEISENHEIMER TL SCHWANK JR SHANEYFELT MR RIEWE LC
Citation: Dm. Fleetwood et al., EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES, Journal of applied physics, 73(10), 1993, pp. 5058-5074
A CRITICAL COMPARISON OF CHARGE-PUMPING, DUAL-TRANSISTOR, AND MIDGAP MEASUREMENT TECHNIQUES
Authors: SCHWANK JR FLEETWOOD DM SHANEYFELT MR WINOKUR PS
Citation: Jr. Schwank et al., A CRITICAL COMPARISON OF CHARGE-PUMPING, DUAL-TRANSISTOR, AND MIDGAP MEASUREMENT TECHNIQUES, IEEE transactions on nuclear science, 40(6), 1993, pp. 1666-1677
EFFECTS OF DEVICE SCALING AND GEOMETRY ON MOS RADIATION HARDNESS ASSURANCE
Authors: SHANEYFELT MR FLEETWOOD DM WINOKUR PS SCHWANK JR MEISENHEIMER TL
Citation: Mr. Shaneyfelt et al., EFFECTS OF DEVICE SCALING AND GEOMETRY ON MOS RADIATION HARDNESS ASSURANCE, IEEE transactions on nuclear science, 40(6), 1993, pp. 1678-1685
PARAMAGNETIC DEFECT CENTERS IN BESOI AND SIMOX BURIED OXIDES
Authors: WARREN WL SHANEYFELT MR SCHWANK JR FLEETWOOD DM WINOKUR PS DEVINE RAB MASZARA WP MCKITTERICK JB
Citation: Wl. Warren et al., PARAMAGNETIC DEFECT CENTERS IN BESOI AND SIMOX BURIED OXIDES, IEEE transactions on nuclear science, 40(6), 1993, pp. 1755-1764
EXCESS-SI RELATED DEFECT CENTERS IN BURIED SIO2 THIN-FILMS
Authors: WARREN WL FLEETWOOD DM SHANEYFELT MR SCHWANK JR WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., EXCESS-SI RELATED DEFECT CENTERS IN BURIED SIO2 THIN-FILMS, Applied physics letters, 62(25), 1993, pp. 3330-3332
LATENT THERMALLY ACTIVATED INTERFACE-TRAP GENERATION IN MOS DEVICES
Authors: SCHWANK JR FLEETWOOD DM SHANEYFELT MR WINOKUR PS
Citation: Jr. Schwank et al., LATENT THERMALLY ACTIVATED INTERFACE-TRAP GENERATION IN MOS DEVICES, IEEE electron device letters, 13(4), 1992, pp. 203-205
Risultati: 1-25 | 26-31 |