Authors: TANG SP WALLACE RM SEABAUGH A KINGSMITH D

Citation: Sp. Tang et al., EVALUATING THE MINIMUM THICKNESS OF GATE OXIDE ON SILICON USING FIRST-PRINCIPLES METHOD, Applied surface science, 135(1-4), 1998, pp. 137-142

Authors: RANDALL J FRAZIER G SEABAUGH A BROEKAERT T

Citation: J. Randall et al., POTENTIAL NANOELECTRONIC INTEGRATED-CIRCUIT TECHNOLOGIES, Microelectronic engineering, 32(1-4), 1996, pp. 15-30

Authors: SKALA SL WU W TUCKER JR LYDING JW SEABAUGH A BEAM EA JOVANOVIC D

Citation: Sl. Skala et al., INTERFACE CHARACTERIZATION IN AN INP INGAAS RESONANT-TUNNELING DIODE BY SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 660-663

Authors: WU W SKALA SL TUCKER JR LYDING JW SEABAUGH A BEAM EA JOVANOVIC D

Citation: W. Wu et al., INTERFACE CHARACTERIZATION OF AN INP INGAAS RESONANT-TUNNELING DIODE BY SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 602-606