Authors: SEARLES S PULFREY DL KLECKNER TC

Citation: S. Searles et al., ANALYTICAL EXPRESSIONS FOR THE TUNNEL CURRENT AT ABRUPT SEMICONDUCTOR-SEMICONDUCTOR HETEROJUNCTIONS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1851-1856

Authors: SEARLES S PULFREY DL

Citation: S. Searles et Dl. Pulfrey, THE INFLUENCE OF A TRANSVERSE-EFFECTIVE-MASS DIFFERENCE ON THE CURRENT AT AN ABRUPT HETEROJUNCTION, Journal of applied physics, 79(8), 1996, pp. 4203-4210

Authors: WINTERTON SS SEARLES S PETERS CJ TARR NG PULFREY DL

Citation: Ss. Winterton et al., DISTRIBUTION OF BASE DOPANT FOR TRANSIT-TIME MINIMIZATION IN A BIPOLAR-TRANSISTOR, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 170-172

Authors: SEARLES S PULFREY DL

Citation: S. Searles et Dl. Pulfrey, AN ANALYSIS OF SPACE-CHARGE-REGION RECOMBINATION IN HBTS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 476-483

Authors: PULFREY DL SEARLES S

Citation: Dl. Pulfrey et S. Searles, ELECTRON QUASI-FERMI LEVEL SPLITTING AT THE BASE EMITTER JUNCTION OF ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1183-1185