Citation: K. Sedeek et al., THE EFFECT OF TE ISOELECTRONIC SUBSTITUTION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF THE GE-S-SE AMORPHOUS-CHALCOGENIDE SYSTEM STUDIED IN THIN-FILMS, Vacuum, 51(3), 1998, pp. 329-333
Citation: M. Fadel et al., EFFECT OF LIGHT SOAKING ON THE ELECTRICAL-PROPERTIES OF THE GE0.20TE0.75BI0.05 GLASS SYSTEM, Thin solid films, 283(1-2), 1996, pp. 239-242
Citation: Fa. Elsalam et al., TEMPERATURE AND THICKNESS DEPENDENCE OF PHOTOCONDUCTIVITY AND DENSITY-OF-STATES DISTRIBUTION FOR BI DOPED GE20S80, Vacuum, 45(8), 1994, pp. 835-839
Authors:
SEDEEK K
MAHMOUD EA
TERRA FS
SAID A
ELDIN SM
Citation: K. Sedeek et al., OPTICAL-PROPERTIES OF AMORPHOUS-CHALCOGENIDE THIN-FILMS - THE EFFECT OF TE ISOVALENCE SUBSTITUTION IN THE GE-S-SE SYSTEM, Journal of physics. D, Applied physics, 27(1), 1994, pp. 156-159
Citation: K. Sedeek et M. Fadel, ELECTRICAL AND OPTICAL STUDIES IN SOME BI DOPED AMORPHOUS-CHALCOGENIDE THIN-FILMS, Thin solid films, 229(2), 1993, pp. 223-226