AAAAAA
Results:
1-15
|
Results: 15
Authors:
SELTZER CP
WESTBROOK LD
WICKES HJ
Citation: Cp. Seltzer et al., THE GAIN-LEVER EFFECT IN INGAASP INP MULTIPLE-QUANTUM-WELL LASERS/, Journal of lightwave technology, 13(2), 1995, pp. 283-289
Authors:
PERCIVAL RM
SZEBESTA D
SELTZER CP
PERRIN SD
DAVEY ST
LOUKA M
Citation: Rm. Percival et al., A 1.6-MU-M PUMPED 1.9-MU-M THULIUM-DOPED FLUORIDE FIBER LASER AND AMPLIFIER OF VERY HIGH-EFFICIENCY, IEEE journal of quantum electronics, 31(3), 1995, pp. 489-493
Authors:
RENNER MJ
SELTZER CP
Citation: Mj. Renner et Cp. Seltzer, SEQUENTIAL STRUCTURE IN BEHAVIORAL COMPONENTS OF OBJECT INVESTIGATIONBY LONG-EVANS RATS (RATTUS-NORVEGICUS), Journal of comparative psychology, 108(4), 1994, pp. 335-343
Authors:
PERRIN SD
SELTZER CP
SPURDENS PC
Citation: Sd. Perrin et al., HIGH-QUALITY COMPRESSIVELY STRAINED INP-BASED GAINAS(P) GAINASP MULTIQUANTUM-WELL LASER STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 23(2), 1994, pp. 81-85
Authors:
MURRELL DL
SELTZER CP
GIBBINGS CJ
ELTON DJ
Citation: Dl. Murrell et al., A STUDY OF 0.98 MU-M LASERS WITH GA0.50IN0.50P CONFINING LAYERS (VOL 9, PG 1998, 1994), Semiconductor science and technology, 9(8), 1994, pp. 1573-1573
Authors:
MURRELL DL
SELTZER CP
GIBBINGS CJ
ELTON DJ
Citation: Dl. Murrell et al., A STUDY OF 0.98 MU-M LAYERS WITH GA0.50IN0.50P CONFINING LAYERS, Semiconductor science and technology, 9(6), 1994, pp. 1198-1203
Authors:
SELTZER CP
PERRIN SD
HARLOW MJ
STUDD R
SPURDENS PC
Citation: Cp. Seltzer et al., LONG-TERM RELIABILITY OF STRAIN-COMPENSATED INGAAS(P) INP MQW BH LASERS/, Electronics Letters, 30(3), 1994, pp. 227-229
Authors:
ASGHARI M
ZHU B
WHITE IH
SELTZER CP
NICE C
HENNING ID
BURNESS AL
THOMPSON GHB
Citation: M. Asghari et al., DEMONSTRATION OF AN INTEGRATED MULTICHANNEL GRATING CAVITY LASER FOR WDM APPLICATIONS, Electronics Letters, 30(20), 1994, pp. 1674-1675
Authors:
LEALMAN IF
SELTZER CP
RIVERS LJ
HARLOW MJ
PERRIN SD
Citation: If. Lealman et al., LOW-THRESHOLD CURRENT 1.6-MU-M INGAASP INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH IMPROVED COUPLING TO CLEAVED SINGLEMODE FIBER/, Electronics Letters, 30(12), 1994, pp. 973-975
Authors:
WILLATZEN M
MARK J
MORK J
SELTZER CP
Citation: M. Willatzen et al., CARRIER TEMPERATURE AND SPECTRAL HOLEBURNING DYNAMICS IN INGAASP QUANTUM-WELL LASER-AMPLIFIERS, Applied physics letters, 64(2), 1994, pp. 143-145
Authors:
MORK J
MARK J
SELTZER CP
Citation: J. Mork et al., CARRIER HEATING IN INGAASP LASER-AMPLIFIERS DUE TO 2-PHOTON ABSORPTION, Applied physics letters, 64(17), 1994, pp. 2206-2208
Authors:
WESTBROOK LD
SELTZER CP
Citation: Ld. Westbrook et Cp. Seltzer, REDUCED INTERMODULATION-FREE DYNAMIC-RANGE IN GAIN-LEVER LASERS (VOL 29, PG 488, 1993), Electronics Letters, 29(8), 1993, pp. 726-726
Authors:
WESTBROOK LD
SELTZER CP
Citation: Ld. Westbrook et Cp. Seltzer, REDUCED INTERMODULATION-FREE DYNAMIC-RANGE IN GAIN-LEVER LASERS, Electronics Letters, 29(5), 1993, pp. 488-489
Authors:
PERCIVAL RM
SZEBESTA D
SELTZER CP
PERRIN SD
DAVEY ST
LOUKA M
Citation: Rm. Percival et al., 1.6 MU-M SEMICONDUCTOR DIODE-PUMPED THULIUM-DOPED FLUORIDE FIBER LASER AND AMPLIFIER OF VERY HIGH-EFFICIENCY, Electronics Letters, 29(24), 1993, pp. 2110-2112
Authors:
SELTZER CP
WESTBROOK LD
WICKES HJ
Citation: Cp. Seltzer et al., IMPROVED SIGNAL-TO-NOISE RATIO IN GAIN-LEVERED INGAAS INP MQW LASERS, Electronics Letters, 29(2), 1993, pp. 230-231
Risultati:
1-15
|