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Results: 1-9 |
Results: 9
SPECIAL ISSUE ON PARAMETRIC ALGEBRAIC-CURVES AND APPLICATIONS - FOREWORD
Authors: HOFFMANN CM SENDRA JR WINKLER F
Citation: Cm. Hoffmann et al., SPECIAL ISSUE ON PARAMETRIC ALGEBRAIC-CURVES AND APPLICATIONS - FOREWORD, Journal of symbolic computation, 23(2-3), 1997, pp. 133-135
PARAMETRIZATION OF ALGEBRAIC-CURVES OVER OPTIMAL FIELD-EXTENSIONS
Authors: SENDRA JR WINKLER F
Citation: Jr. Sendra et F. Winkler, PARAMETRIZATION OF ALGEBRAIC-CURVES OVER OPTIMAL FIELD-EXTENSIONS, Journal of symbolic computation, 23(2-3), 1997, pp. 191-207
REAL REPARAMETRIZATIONS OF REAL CURVES
Authors: RECIO T SENDRA JR
Citation: T. Recio et Jr. Sendra, REAL REPARAMETRIZATIONS OF REAL CURVES, Journal of symbolic computation, 23(2-3), 1997, pp. 241-254
PARAMETRIC GENERALIZED OFFSETS TO HYPERSURFACES
Authors: ARRONDO E SENDRA J SENDRA JR
Citation: E. Arrondo et al., PARAMETRIC GENERALIZED OFFSETS TO HYPERSURFACES, Journal of symbolic computation, 23(2-3), 1997, pp. 267-285
OPTICAL STUDY OF INP ETCHED IN METHANE-BASED PLASMAS BY REACTIVE ION-BEAM ETCHING
Authors: SENDRA JR ARMELLES G ANGUITA J
Citation: Jr. Sendra et al., OPTICAL STUDY OF INP ETCHED IN METHANE-BASED PLASMAS BY REACTIVE ION-BEAM ETCHING, Semiconductor science and technology, 11(2), 1996, pp. 238-242
RESONANT RAMAN-SCATTERING STUDY OF INSB ETCHED BY REACTIVE ION-BEAM ETCHING
Authors: SENDRA JR ARMELLES G UTZMEIER T ANGUITA J BRIONES F
Citation: Jr. Sendra et al., RESONANT RAMAN-SCATTERING STUDY OF INSB ETCHED BY REACTIVE ION-BEAM ETCHING, Journal of applied physics, 79(11), 1996, pp. 8853-8855
INP TUNNEL-JUNCTIONS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP AND INP-ON-SI SUBSTRATES
Authors: DOTOR ML GOLMAYO D CALLE A SENDRA JR ANGUITA JV GONZALEZ L GONZALEZ Y BRIONES F
Citation: Ml. Dotor et al., INP TUNNEL-JUNCTIONS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP AND INP-ON-SI SUBSTRATES, Solar energy materials and solar cells, 36(3), 1995, pp. 271-276
REACTIVE ION-BEAM ETCHING OF ALUMINUM INDIUM-ANTIMONIDE, GALLIUM INDIUM-ANTIMONIDE HETEROSTRUCTURES IN ELECTRON-CYCLOTRON-RESONANCE METHANEHYDROGEN/NITROGEN/SILICON TETRACHLORIDE DISCHARGES AT ROOM-TEMPERATURE/
Authors: SENDRA JR ANGUITA J PEREZCAMACHO JJ BRIONES F
Citation: Jr. Sendra et al., REACTIVE ION-BEAM ETCHING OF ALUMINUM INDIUM-ANTIMONIDE, GALLIUM INDIUM-ANTIMONIDE HETEROSTRUCTURES IN ELECTRON-CYCLOTRON-RESONANCE METHANEHYDROGEN/NITROGEN/SILICON TETRACHLORIDE DISCHARGES AT ROOM-TEMPERATURE/, Applied physics letters, 67(22), 1995, pp. 3289-3291
REACTIVE ION-BEAM ETCHING OF INDIUM-PHOSPHIDE IN ELECTRON-CYCLOTRON-RESONANCE PLASMA USING METHANE HYDROGEN NITROGEN MIXTURES
Authors: SENDRA JR ANGUITA J
Citation: Jr. Sendra et J. Anguita, REACTIVE ION-BEAM ETCHING OF INDIUM-PHOSPHIDE IN ELECTRON-CYCLOTRON-RESONANCE PLASMA USING METHANE HYDROGEN NITROGEN MIXTURES, JPN J A P 2, 33(3A), 1994, pp. 120000390-120000393
Risultati: 1-9 |