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Results:
1-8
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Results: 8
Authors:
YEH CF
CHEN TJ
LIU C
SHAO JQ
CHEUNG NW
Citation: Cf. Yeh et al., APPLICATION OF PLASMA IMMERSION ION-IMPLANTATION DOPING TO LOW-TEMPERATURE PROCESSED POLY-SI TFTS, IEEE electron device letters, 19(11), 1998, pp. 432-434
Authors:
YANG BL
JONES EC
CHEUNG NW
SHAO JQ
WONG H
CHENG YC
Citation: Bl. Yang et al., N(+) P ULTRA-SHALLOW JUNCTION FORMATION WITH PLASMA IMMERSION ION-IMPLANTATION/, Microelectronics and reliability, 38(9), 1998, pp. 1489-1494
Authors:
JONES EC
SHAO JQ
DENHOLM AS
CHEUNG NW
Citation: Ec. Jones et al., REDUCING THE EFFECTS OF PLASMA PROXIMITY IN PLASMA IMMERSION ION-IMPLANTATION, JPN J A P 1, 36(7B), 1997, pp. 4935-4940
Authors:
SHAO JQ
JONES EC
CHEUNG NW
Citation: Jq. Shao et al., SHALLOW JUNCTION FORMATION BY PLASMA IMMERSION ION-IMPLANTATION, Surface & coatings technology, 93(2-3), 1997, pp. 254-257
Authors:
QIN S
BERNSTEIN JD
ZHAO ZF
LIU W
CHAN C
SHAO JQ
DENHOLM S
Citation: S. Qin et al., CHARGING EFFECTS IN PLASMA IMMERSION ION-IMPLANTATION FOR MICROELECTRONICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 1994-1998
Authors:
SHAO JQ
ROUND M
QIN S
CHAN C
Citation: Jq. Shao et al., DOSE-TIME RELATION IN BF3 PLASMA IMMERSION ION-IMPLANTATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 332-334
Authors:
QIN S
BERNSTEIN JD
ZHAO ZF
CHAN C
SHAO JQ
DENHOLM S
Citation: S. Qin et al., AN INVESTIGATION OF DOPANT GASES IN PLASMA IMMERSION ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 636-640
Authors:
HAN B
SHAO JQ
GUO BQ
Citation: B. Han et al., A WIDELY CONVERGENT METHOD FOR DETERMINING THE DISTRIBUTED PARAMETERSOF AN ELLIPTIC EQUATION, Applied mathematics and computation, 60(2-3), 1994, pp. 139-146
Risultati:
1-8
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