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Results: 1-9 |
Results: 9
INVESTIGATION OF THE HETEROEPITAXIAL STRUCTURES (P-3C N-6H)-SIC/
Authors: LEBEDEV AA SAVKINA NS TREGUBOVA AS SHCHEGLOV MP
Citation: Aa. Lebedev et al., INVESTIGATION OF THE HETEROEPITAXIAL STRUCTURES (P-3C N-6H)-SIC/, Semiconductors, 31(9), 1997, pp. 926-928
STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES
Authors: ANDREEV AN SMIRNOVA NY TREGUBOVA AS SHCHEGLOV MP CHELNOKOV VE
Citation: An. Andreev et al., STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES, Semiconductors, 31(3), 1997, pp. 232-236
INFLUENCE OF VAPOR-PHASE COMPOSITION IN A GROWTH CELL ON THE DOPING LEVEL OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN BY VACUUM SUBLIMATION
Authors: ANDREEV AN SMIRNOVA NY SHCHEGLOV MP RASTEGAEVA MG CHELNOKOV VE RASTEGAEV VP
Citation: An. Andreev et al., INFLUENCE OF VAPOR-PHASE COMPOSITION IN A GROWTH CELL ON THE DOPING LEVEL OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN BY VACUUM SUBLIMATION, Semiconductors, 30(11), 1996, pp. 1074-1077
HETEROEPITAXIAL GROWTH OF SIC FILMS ON ALN AL2O3 SUBSTRATES/
Authors: KUZNETSOV AN LEBEDEV AA RASTEGAEVA MG ROGACHEV NA TERUKOV EI SHCHEGLOV MP
Citation: An. Kuznetsov et al., HETEROEPITAXIAL GROWTH OF SIC FILMS ON ALN AL2O3 SUBSTRATES/, Semiconductors, 29(8), 1995, pp. 740-742
ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD
Authors: ANDREEV AN TREGUBOVA AS SHCHEGLOV MP RASTEGAEV VP DOROZHKIN SI CHELNOKOV VE
Citation: An. Andreev et al., ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD, Semiconductors, 29(10), 1995, pp. 955-956
DEPENDENCE OF GREEN ELECTROLUMINESCENCE O F 6H SIC OF P-N-STRUCTURES ON THE PRESENCE OF 3C POLYTYPE CRYSTALLINE INCLUSIONS
Authors: LEBEDEV AA SHCHEGLOV MP SOKOLOVA TV
Citation: Aa. Lebedev et al., DEPENDENCE OF GREEN ELECTROLUMINESCENCE O F 6H SIC OF P-N-STRUCTURES ON THE PRESENCE OF 3C POLYTYPE CRYSTALLINE INCLUSIONS, Pis'ma v Zurnal tehniceskoj fiziki, 21(16), 1995, pp. 48-51
STUDY ON CRUCIBLELESS SILICON PREPARED UN DER THE HIGH GROWTH SPEED BY THE HIGH-RESOLUTION ELECTRON-MICROSCOPY TECHNIQUE
Authors: SOROKIN LM PONOMAREVA NB GUSEVA NB SHCHEGLOV MP KHATCHISON D
Citation: Lm. Sorokin et al., STUDY ON CRUCIBLELESS SILICON PREPARED UN DER THE HIGH GROWTH SPEED BY THE HIGH-RESOLUTION ELECTRON-MICROSCOPY TECHNIQUE, Fizika tverdogo tela, 36(9), 1994, pp. 2657-2665
OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE
Authors: ANDREEV AN BABANIN AI KUZNETSOV AN RASTEGAEVA MG TERUKOV EI CHELNOKOV VE SHCHEGLOV MP
Citation: An. Andreev et al., OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 11-15
DISLOCATION-STRUCTURE OF MBE-GROWN EPITAXIAL GASB LAYERS ON (001) GAAS SUBSTRATES
Authors: KUTT RN SCHOLZ R RUVIMOV SS ARGUNOVA TS BUDZA AA IVANOV SV KOPYEV PS SOROKIN LM SHCHEGLOV MP
Citation: Rn. Kutt et al., DISLOCATION-STRUCTURE OF MBE-GROWN EPITAXIAL GASB LAYERS ON (001) GAAS SUBSTRATES, Fizika tverdogo tela, 35(3), 1993, pp. 724-735
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