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Results: 1-9 |
Results: 9

Authors: OSINSKY A GANGOPADHYAY S YANG JW GASKA R KUKSENKOV D TEMKIN H SHMAGIN IK CHANG YC MUTH JF KOLBAS RM
Citation: A. Osinsky et al., VISIBLE-BLIND GAN SCHOTTKY-BARRIER DETECTORS GROWN ON SI(111), Applied physics letters, 72(5), 1998, pp. 551-553

Authors: SHMAGIN IK MUTH JF KOLBAS RM KRISHNANKUTTY S KELLER S ABARE AC COLDREN LA MISHRA UK DENBAARS SP
Citation: Ik. Shmagin et al., PHOTOLUMINESCENCE CHARACTERISTICS OF GAN INGAN/GAN QUANTUM-WELLS/, Journal of electronic materials, 26(3), 1997, pp. 325-329

Authors: KELLER S KELLER BP KAPOLNEK D MISHRA UK DENBAARS SP SHMAGIN IK KOLBAS RM KRISHNANKUTTY S
Citation: S. Keller et al., GROWTH OF BULK INGAN FILMS AND QUANTUM-WELLS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 170(1-4), 1997, pp. 349-352

Authors: SHMAGIN IK MUTH JF KOLBAS RM KRISHNANKUTTY S KELLER S MISHRA UK DENBAARS SP
Citation: Ik. Shmagin et al., OBSERVATION OF LASING FROM PHOTOPUMPED INGAN GAN HETEROSTRUCTURES IN AN EDGE EMITTING CONFIGURATION/, Journal of applied physics, 81(4), 1997, pp. 2021-2023

Authors: SHMAGIN IK MUTH JF LEE JH KOLBAS RM BALKAS CM SITAR Z DAVIS RF
Citation: Ik. Shmagin et al., OPTICAL METASTABILITY IN BULK GAN SINGLE-CRYSTALS, Applied physics letters, 71(4), 1997, pp. 455-457

Authors: MUTH JF LEE JH SHMAGIN IK KOLBAS RM CASEY HC KELLER BP MISHRA UK DENBAARS SP
Citation: Jf. Muth et al., ABSORPTION-COEFFICIENT, ENERGY-GAP, EXCITON BINDING-ENERGY, AND RECOMBINATION LIFETIME OF GAN OBTAINED FROM TRANSMISSION MEASUREMENTS, Applied physics letters, 71(18), 1997, pp. 2572-2574

Authors: SHMAGIN IK MUTH JF KOLBAS RM MACK MP ABARE AC KELLER S COLDREN LA MISHRA UK DENBAARS SP
Citation: Ik. Shmagin et al., RECONFIGURABLE OPTICAL-PROPERTIES IN INGAN GAN QUANTUM-WELLS/, Applied physics letters, 71(11), 1997, pp. 1455-1457

Authors: SHMAGIN IK MUTH JF KOLBAS RM DUPUIS RD GRUDOWSKI PA EITING CJ PARK J SHELTON BS LAMBERT DJH
Citation: Ik. Shmagin et al., OPTICAL-DATA STORAGE IN INGAN GAN HETEROSTRUCTURES/, Applied physics letters, 71(10), 1997, pp. 1382-1384

Authors: YUAN C SALAGAJ T GURARY A THOMPSON AG KROLL W STALL RA HWANG CY SCHURMAN M LI Y MAYO WE LU Y KRISHNANKUTTY S SHMAGIN IK KOLBAS RM PEARTON SJ
Citation: C. Yuan et al., INVESTIGATION OF N-TYPE AND P-TYPE DOPING OF GAN DURING EPITAXIAL-GROWTH IN A MASS-PRODUCTION SCALE MULTIWAFER-ROTATING-DISK REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2075-2080
Risultati: 1-9 |