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Results: 10

Authors: BELENKY GL DONETSKY DV REYNOLDS CL KAZARINOV RF SHTENGEL GE LURYI S LOPATA J
Citation: Gl. Belenky et al., TEMPERATURE PERFORMANCE OF 1.3-MU-M INGAASP-INP LASERS WITH DIFFERENTPROFILE OF P-DOPING, IEEE photonics technology letters, 9(12), 1997, pp. 1558-1560

Authors: KAZARINOV RF SHTENGEL GE
Citation: Rf. Kazarinov et Ge. Shtengel, EFFECT OF CARRIER HEATING ON STATIC LINEARITY OF MQW INGAASP INP LASERS/, Journal of lightwave technology, 15(12), 1997, pp. 2284-2286

Authors: SHTENGEL GE KAZARINOV RF BELENKY GL REYNOLDS CL
Citation: Ge. Shtengel et al., WAVELENGTH CHIRP AND DEPENDENCE OF CARRIER TEMPERATURE ON CURRENT IN MQW INGAASP-INP LASERS, IEEE journal of quantum electronics, 33(8), 1997, pp. 1396-1402

Authors: MORTON PA SHTENGEL GE TZENG LD YADVISH RD TANBUNEK T LOGAN RA
Citation: Pa. Morton et al., 38.5 KM ERROR-FREE TRANSMISSION AT 10 GBIT S IN STANDARD FIBER USING A LOW CHIRP, SPECTRALLY FILTERED, DIRECTLY MODULATED 1.55 MU-M DFB LASER/, Electronics Letters, 33(4), 1997, pp. 310-311

Authors: ACKERMAN DA SHTENGEL GE HYBERTSEN MS MORTON PA KAZARINOV RF TANBUNEK T LOGAN RA
Citation: Da. Ackerman et al., ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 250-263

Authors: MORTON PA ACKERMAN DA SHTENGEL GE KAZARINOV RF HYBERTSEN MS TANBUNEK T LOGAN RA SERGENT AM
Citation: Pa. Morton et al., GAIN CHARACTERISTICS OF 1.55-MU-M HIGH-SPEED MULTIPLE-QUANTUM-WELL LASERS, IEEE photonics technology letters, 7(8), 1995, pp. 833-835

Authors: SHTENGEL GE ACKERMAN DA MORTON PA
Citation: Ge. Shtengel et al., TRUE CARRIER LIFETIME MEASUREMENTS OF SEMICONDUCTOR-LASERS, Electronics Letters, 31(20), 1995, pp. 1747-1748

Authors: SHTENGEL GE ACKERMAN DA
Citation: Ge. Shtengel et Da. Ackerman, INTERNAL OPTICAL LOSS MEASUREMENTS IN 1.3-MU-M INGAASP LASERS, Electronics Letters, 31(14), 1995, pp. 1157-1159

Authors: SHTENGEL GE ACKERMAN DA MORTON PA FLYNN EJ HYBERTSEN MS
Citation: Ge. Shtengel et al., IMPEDANCE-CORRECTED CARRIER LIFETIME MEASUREMENTS IN SEMICONDUCTOR-LASERS, Applied physics letters, 67(11), 1995, pp. 1506-1508

Authors: ACKERMAN DA MORTON PA SHTENGEL GE HYBERTSEN MS KAZARINOV RF TANBUNEK T LOGAN RA
Citation: Da. Ackerman et al., ANALYSIS OF T-0 IN 1.3-MU-M MULTI-QUANTUM-WELL AND BULK ACTIVE LASERS, Applied physics letters, 66(20), 1995, pp. 2613-2615
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