ACNP - Italian Periodicals Catalogue

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SURFACE RECONSTRUCTION OF ZINCBLENDE GAN

Authors: BYKHOVSKI AD SHUR MS

Citation: Ad. Bykhovski et Ms. Shur, SURFACE RECONSTRUCTION OF ZINCBLENDE GAN, Applied physics letters, 69(16), 1996, pp. 2397-2399

PIEZORESISTIVE EFFECT IN WURTZITE N-TYPE GAN

Authors: BYKHOVSKI AD KAMINSKI VV SHUR MS CHEN QC KHAN MA

Citation: Ad. Bykhovski et al., PIEZORESISTIVE EFFECT IN WURTZITE N-TYPE GAN, Applied physics letters, 68(6), 1996, pp. 818-819

LOW-FREQUENCY NOISE IN 2-DIMENSIONAL METAL-SEMICONDUCTOR FIELD-EFFECTTRANSISTOR

Authors: LEVINSHTEIN ME RUMYANTSEV SL SIMIN GS PARK H PEATMAN WCB SHUR MS

Citation: Me. Levinshtein et al., LOW-FREQUENCY NOISE IN 2-DIMENSIONAL METAL-SEMICONDUCTOR FIELD-EFFECTTRANSISTOR, Applied physics letters, 68(22), 1996, pp. 3138-3140

HALL MEASUREMENTS AND CONTACT RESISTANCE IN DOPED GAN ALGAN HETEROSTRUCTURES/

Authors: KHAN MA SHUR MS CHEN Q

Citation: Ma. Khan et al., HALL MEASUREMENTS AND CONTACT RESISTANCE IN DOPED GAN ALGAN HETEROSTRUCTURES/, Applied physics letters, 68(21), 1996, pp. 3022-3024

CHOKING OF ELECTRON FLOW - A MECHANISM OF CURRENT SATURATION IN FIELD-EFFECT TRANSISTORS

Authors: DYAKONOV MI SHUR MS

Citation: Mi. Dyakonov et Ms. Shur, CHOKING OF ELECTRON FLOW - A MECHANISM OF CURRENT SATURATION IN FIELD-EFFECT TRANSISTORS, Physical review. B, Condensed matter, 51(20), 1995, pp. 14341-14345

NOVEL HETERODIMENSIONAL DIODES AND TRANSISTORS

Authors: SHUR MS PEATMAN WC PARK H GRIMM W HURT M

Citation: Ms. Shur et al., NOVEL HETERODIMENSIONAL DIODES AND TRANSISTORS, Solid-state electronics, 38(9), 1995, pp. 1727-1730

DISK AND STRIPE CAPACITANCES

Authors: GELMONT B SHUR MS MATTAUCH RJ

Citation: B. Gelmont et al., DISK AND STRIPE CAPACITANCES, Solid-state electronics, 38(3), 1995, pp. 731-734

ELASTIC STRAIN RELAXATION IN GAN-ALN-GAN SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURES

Authors: BYKHOVSKI AD GELMONT BL SHUR MS

Citation: Ad. Bykhovski et al., ELASTIC STRAIN RELAXATION IN GAN-ALN-GAN SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURES, Journal of applied physics, 78(6), 1995, pp. 3691-3696

HALL FACTOR FOR IONIZED IMPURITY SCATTERING

Authors: GELMONT B SHUR MS

Citation: B. Gelmont et Ms. Shur, HALL FACTOR FOR IONIZED IMPURITY SCATTERING, Journal of applied physics, 78(4), 1995, pp. 2846-2847

NARROW CHANNEL 2-D MESFET FOR LOW-POWER ELECTRONICS

Authors: PEATMAN WCB HURT MJ PARK H YTTERDAL T TSAI R SHUR MS

Citation: Wcb. Peatman et al., NARROW CHANNEL 2-D MESFET FOR LOW-POWER ELECTRONICS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1569-1573

ENHANCED GAAS-MESFET CAD MODEL FOR A WIDE-RANGE OF TEMPERATURES

Authors: YTTERDAL T MOON BJ FJELDLY TA SHUR MS

Citation: T. Ytterdal et al., ENHANCED GAAS-MESFET CAD MODEL FOR A WIDE-RANGE OF TEMPERATURES, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1724-1734

GATED PHOTODETECTOR BASED ON GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/

Authors: KHAN MA SHUR MS CHEN Q KUZNIA JN SUN CJ

Citation: Ma. Khan et al., GATED PHOTODETECTOR BASED ON GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, Electronics Letters, 31(5), 1995, pp. 398-400

HIGH TRANSCONDUCTANCE ALGAN GAN OPTOELECTRONIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/

Authors: KHAN MA SHUR MS CHEN Q

Citation: Ma. Khan et al., HIGH TRANSCONDUCTANCE ALGAN GAN OPTOELECTRONIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, Electronics Letters, 31(24), 1995, pp. 2130-2131

2-DIMENSIONAL ELECTRONIC FLUTE

Authors: DYAKONOV MI SHUR MS

Citation: Mi. Dyakonov et Ms. Shur, 2-DIMENSIONAL ELECTRONIC FLUTE, Applied physics letters, 67(8), 1995, pp. 1137-1139

TEMPERATURE ACTIVATED CONDUCTANCE IN GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS OPERATING AT TEMPERATURES UP TO 300-DEGREES-C/

Authors: KHAN MA SHUR MS KUZNIA JN CHEN Q BURM J SCHAFF W

Citation: Ma. Khan et al., TEMPERATURE ACTIVATED CONDUCTANCE IN GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS OPERATING AT TEMPERATURES UP TO 300-DEGREES-C/, Applied physics letters, 66(9), 1995, pp. 1083-1085

MODELING FREQUENCY-DEPENDENCE OF GAAS-MESFET CHARACTERISTICS

Authors: CONGER J PECZALSKI A SHUR MS

Citation: J. Conger et al., MODELING FREQUENCY-DEPENDENCE OF GAAS-MESFET CHARACTERISTICS, IEEE journal of solid-state circuits, 29(1), 1994, pp. 71-76

CURRENT-VOLTAGE CHARACTERISTIC COLLAPSE IN ALGAN GAN HETEROSTRUCTURE INSULATED GATE FIELD-EFFECT TRANSISTORS AT HIGH DRAIN BIAS/

Authors: KHAN MA SHUR MS CHEN QC KUZNIA JN

Citation: Ma. Khan et al., CURRENT-VOLTAGE CHARACTERISTIC COLLAPSE IN ALGAN GAN HETEROSTRUCTURE INSULATED GATE FIELD-EFFECT TRANSISTORS AT HIGH DRAIN BIAS/, Electronics Letters, 30(25), 1994, pp. 2175-2176

SUB-0.1-MU-M MOSFET MODELING AND CIRCUIT SIMULATION

Authors: YTTERDAL T SHUR MS FJELDLY TA

Citation: T. Ytterdal et al., SUB-0.1-MU-M MOSFET MODELING AND CIRCUIT SIMULATION, Electronics Letters, 30(18), 1994, pp. 1545-1546

MICROWAVE PERFORMANCE OF A 0.25 MU-M GATE ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/

Authors: KHAN MA KUZNIA JN OLSON DT SCHAFF WJ BURM JW SHUR MS

Citation: Ma. Khan et al., MICROWAVE PERFORMANCE OF A 0.25 MU-M GATE ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, Applied physics letters, 65(9), 1994, pp. 1121-1123

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