Authors: YAKOVLEV NL SHUSTERMAN YV MAKSYM PA

Citation: Nl. Yakovlev et al., HYDROGEN-TERMINATED SI(111) SURFACE STUDIED BY RHEED, Applied surface science, 132, 1998, pp. 310-313

Authors: LEE BC KHILKO AY SHUSTERMAN YV YAKOVLEV NL SOKOLOV NS KYUTT RN SUTURIN SM SCHOWALTER LJ

Citation: Bc. Lee et al., STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF EPITAXIAL CDF2 LAYERS GROWN ON SI(111) AND CAF2(111) SUBSTRATES, Applied surface science, 123, 1998, pp. 590-594

Authors: SOKOLOV NS ALVAREZ JC SHUSTERMAN YV YAKOVLEV NL OVERNEY RM ITOH Y TAKAHASHI I HARADA J

Citation: Ns. Sokolov et al., STRUCTURAL TRANSFORMATIONS AT CAF2 SI(111) INTERFACES/, Applied surface science, 104, 1996, pp. 402-408

Authors: SOKOLOV NS ALVAREZ JC GASTEV SV SHUSTERMAN YV TAKAHASHI I ITOH Y HARADA J OVERNEY RM

Citation: Ns. Sokolov et al., HIGH-QUALITY CAF2 LAYERS ON SI(111) WITH TYPE-A EPITAXIAL RELATION ATTHE INTERFACE, Journal of crystal growth, 169(1), 1996, pp. 40-50

Authors: YAKOVLEV NL SHUSTERMAN YV

Citation: Nl. Yakovlev et Yv. Shusterman, GROWTH BY MOLECULAR-BEAM EPITAXY AND STRUCTURAL STUDY OF LATTICE-MATCHED MGXCA1-XF2 FILMS ON SILICON, Journal of crystal growth, 150(1-4), 1995, pp. 1119-1121