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Results: 1-10 |
Results: 10
IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF SILICIDATIONPROCESSES FOR COBALT THIN-FILMS DEPOSITED ON SILICON
Authors: SIDOROV MV KARDYNAL B SMITH DJ
Citation: Mv. Sidorov et al., IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF SILICIDATIONPROCESSES FOR COBALT THIN-FILMS DEPOSITED ON SILICON, MICROSCOPY AND MICROANALYSIS, 4(3), 1998, pp. 317-324
STRUCTURAL CHARACTERIZATION OF ULTRATHIN NANOCRYSTALLINE SILICON FILMS FORMED BY ANNEALING AMORPHOUS-SILICON
Authors: LUTZEN J KAMAL AHM KOZICKI MN FERRY DK SIDOROV MV SMITH DJ
Citation: J. Lutzen et al., STRUCTURAL CHARACTERIZATION OF ULTRATHIN NANOCRYSTALLINE SILICON FILMS FORMED BY ANNEALING AMORPHOUS-SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2802-2805
THE EFFECTS OF THE SIMULTANEOUS ADDITION OF DIBORANE AND AMMONIA ON THE HOT-FILAMENT-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF DIAMOND II - CHARACTERIZATION OF DIAMOND AND BCN FILM
Authors: XIE ZY EDGAR JH MCCORMICK TL SIDOROV MV
Citation: Zy. Xie et al., THE EFFECTS OF THE SIMULTANEOUS ADDITION OF DIBORANE AND AMMONIA ON THE HOT-FILAMENT-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF DIAMOND II - CHARACTERIZATION OF DIAMOND AND BCN FILM, DIAMOND AND RELATED MATERIALS, 7(9), 1998, pp. 1357-1363
NOVEL GUEST-LAYER BEHAVIOR OF MERCURY TITANIUM DISULFIDE INTERCALATES
Authors: SIDOROV MV MCKELVY MJ COWLEY JM GLAUNSINGER WS
Citation: Mv. Sidorov et al., NOVEL GUEST-LAYER BEHAVIOR OF MERCURY TITANIUM DISULFIDE INTERCALATES, Chemistry of materials, 10(11), 1998, pp. 3290
APPLICATION OF CHEMICALLY ENHANCED VAPOR ETCHING IN THE FABRICATION ON NANOSTRUCTURES
Authors: KOZICKI MN KARDYNAL B YANG SJ KIM T SIDOROV MV SMITH DJ
Citation: Mn. Kozicki et al., APPLICATION OF CHEMICALLY ENHANCED VAPOR ETCHING IN THE FABRICATION ON NANOSTRUCTURES, Semiconductor science and technology, 13(8A), 1998, pp. 63-66
A 2-TERMINAL NANOCRYSTALLINE SILICON MEMORY DEVICE AT ROOM-TEMPERATURE
Authors: KAMAL AHM LUTZEN J SANBORN BA SIDOROV MV KOZICKI MN SMITH DJ FERRY DK
Citation: Ahm. Kamal et al., A 2-TERMINAL NANOCRYSTALLINE SILICON MEMORY DEVICE AT ROOM-TEMPERATURE, Semiconductor science and technology (Print), 13(11), 1998, pp. 1328-1332
LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF 3C-SIC FILMS ON SI(100) USING SIH4-C2H4-HCL-H-2
Authors: GAO Y EDGAR JH CHAUDHURI J CHEEMA SN SIDOROV MV BRASKI DN
Citation: Y. Gao et al., LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF 3C-SIC FILMS ON SI(100) USING SIH4-C2H4-HCL-H-2, Journal of crystal growth, 191(3), 1998, pp. 439-445
SELECTIVE EPITAXIAL-GROWTH OF SILICON-CARBIDE ON SIO2 MASKED SI(100) - THE EFFECTS OF TEMPERATURE
Authors: EDGAR JH GAO Y CHAUDHURI J CHEEMA S CASALNUOVO SA YIP PW SIDOROV MV
Citation: Jh. Edgar et al., SELECTIVE EPITAXIAL-GROWTH OF SILICON-CARBIDE ON SIO2 MASKED SI(100) - THE EFFECTS OF TEMPERATURE, Journal of applied physics, 84(1), 1998, pp. 201-204
MICROSTRUCTURE OF BARIUM-DEFICIENT SUPERCONDUCTING Y-BA-CU-O THIN-FILMS - OBSERVATIONS USING TRANSMISSION ELECTRON-MICROSCOPY
Authors: SIDOROV MV OKTYABRSKY SR KRASNOSVOBODTSEV SI
Citation: Mv. Sidorov et al., MICROSTRUCTURE OF BARIUM-DEFICIENT SUPERCONDUCTING Y-BA-CU-O THIN-FILMS - OBSERVATIONS USING TRANSMISSION ELECTRON-MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 18(3), 1993, pp. 295-302
EPITAXIAL-GROWTH OF YBA2CU3O7-DELTA FILMS ON OXIDIZED SILICON WITH YTTRIA-BASED AND ZIRCONIA-BASED BUFFER LAYERS
Authors: PECHEN EV SCHOENBERGER R BRUNNER B RITZINGER S RENK KF SIDOROV MV OKTYABRSKY SR
Citation: Ev. Pechen et al., EPITAXIAL-GROWTH OF YBA2CU3O7-DELTA FILMS ON OXIDIZED SILICON WITH YTTRIA-BASED AND ZIRCONIA-BASED BUFFER LAYERS, Journal of applied physics, 74(5), 1993, pp. 3614-3616
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