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Results: 1-14 |
Results: 14
FOCAL PHOTODETECTOR ARRAYS BASED ON CDHGTE HETEROEPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES
Authors: VASILEV VV VOINOV VG ESAEV DG ZAKHARYASH TI KLIMENKO AG KOZLOV AI KRYMSKII AI MARCHISHIN IV OVSYUK VN ROMASHKO LF SVITASHEV KK SUSLYAKOV AO TALIPOV NK SIDOROV YG VARAVIN VC DVORETSKII SA MIKHAILOV NN
Citation: Vv. Vasilev et al., FOCAL PHOTODETECTOR ARRAYS BASED ON CDHGTE HETEROEPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES, Journal of optical technology, 65(1), 1998, pp. 68-72
ELLIPSOMETRIC STUDY OF TELLURIUM MOLECULAR-BEAM INTERACTION WITH DEHYDROGENATED VICINAL SILICON SURFACES
Authors: SHVETS VA CHIKICHEV SI PRIDACHIN DN YAKUSHEV MV SIDOROV YG MARDEZHOV AS
Citation: Va. Shvets et al., ELLIPSOMETRIC STUDY OF TELLURIUM MOLECULAR-BEAM INTERACTION WITH DEHYDROGENATED VICINAL SILICON SURFACES, Thin solid films, 313, 1998, pp. 561-564
CHARGE-CARRIER LIFETIME IN HG1-XCDXTE (X=0.22) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: VOITSEKHOVSKII AV DENISOV YA KOKHANENKO AP VARAVIN VS DVORETSKII SA LIBERMAN VT MIKHAILOV NN SIDOROV YG
Citation: Av. Voitsekhovskii et al., CHARGE-CARRIER LIFETIME IN HG1-XCDXTE (X=0.22) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 31(7), 1997, pp. 655-657
ELLIPSOMETRY AS A POWERFUL TOOL FOR THE CONTROL OF EPITAXIAL SEMICONDUCTOR STRUCTURES IN-SITU AND EX-SITU
Authors: SVITASHEV KK SHVETS VA MARDEZHOV AS DVORETSKY SA SIDOROV YG MIKHAILOV NN SPESIVTSEV EV RYCHLITSKY SV
Citation: Kk. Svitashev et al., ELLIPSOMETRY AS A POWERFUL TOOL FOR THE CONTROL OF EPITAXIAL SEMICONDUCTOR STRUCTURES IN-SITU AND EX-SITU, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 164-167
PECULIARITIES OF THE MBE GROWTH PHYSICS AND TECHNOLOGY OF NARROW-GAP II-VI COMPOUNDS
Authors: SIDOROV YG DVORETSKY SA YAKUSHEV MV MIKHAILOV NN VARAVIN VS LIBERMAN VI
Citation: Yg. Sidorov et al., PECULIARITIES OF THE MBE GROWTH PHYSICS AND TECHNOLOGY OF NARROW-GAP II-VI COMPOUNDS, Thin solid films, 306(2), 1997, pp. 253-265
(112)CDTE B(112) GAAS LATTICE MATCHING IN MOLECULAR-BEAM EPITAXY/
Authors: IVANOV IS SIDOROV YG YAKUSHEV MV
Citation: Is. Ivanov et al., (112)CDTE B(112) GAAS LATTICE MATCHING IN MOLECULAR-BEAM EPITAXY/, Inorganic materials, 33(3), 1997, pp. 243-247
PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK VASILEV VV ZAHARYASH TI SIDOROV YG DVORETSKY SA MIKHAYLOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Infrared physics & technology, 37(3), 1996, pp. 321-323
PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN VASILEV VV ZAKHARYASH TI REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK SIDOROV YG DVORETSKII SA MIKHAILOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY, Semiconductors, 30(2), 1996, pp. 109-111
MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY HG1-XCDXTE FILMS WITH CONTROL OF THE COMPOSITION DISTRIBUTION
Authors: VARAVIN VS DVORETSKY SA LIBERMAN VI MIKHAILOV NN SIDOROV YG
Citation: Vs. Varavin et al., MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY HG1-XCDXTE FILMS WITH CONTROL OF THE COMPOSITION DISTRIBUTION, Journal of crystal growth, 159(1-4), 1996, pp. 1161-1166
LOCAL HETEROGENEITIES OF GA AND AS INTERC ALATION TO ZNSE FILMS FROM GAAS SUBSTRATES
Authors: GAVRILOVA TA SIDOROV YG YAKUSHEV MV
Citation: Ta. Gavrilova et al., LOCAL HETEROGENEITIES OF GA AND AS INTERC ALATION TO ZNSE FILMS FROM GAAS SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 21(1), 1995, pp. 72-75
IN-SITU ELLIPSOMETRY DUE TO GROWING THE F ILMS OF CADMIUM-MERCURY-TELLURIUM SOLID-SOLUTIONS VIA MBE TECHNIQUE
Authors: SVITASHEV KK SHVETS VA MARDEZHOV AS DVORETSKII SA SIDOROV YG VARAVIN VS
Citation: Kk. Svitashev et al., IN-SITU ELLIPSOMETRY DUE TO GROWING THE F ILMS OF CADMIUM-MERCURY-TELLURIUM SOLID-SOLUTIONS VIA MBE TECHNIQUE, Zurnal tehniceskoj fiziki, 65(9), 1995, pp. 110-120
THE CONTROLLED GROWTH OF HIGH-QUALITY MERCURY CADMIUM TELLURIDE
Authors: VARAVIN VS DVORETSKY SA LIBERMAN VI MIKHAILOV NN SIDOROV YG
Citation: Vs. Varavin et al., THE CONTROLLED GROWTH OF HIGH-QUALITY MERCURY CADMIUM TELLURIDE, Thin solid films, 267(1-2), 1995, pp. 121-125
GROWTH OF CDXHG1-XTE FILMS BY VAPOR-PHASE EPITAXY OF HGTE ON CDTE SUBSTRATES FOLLOWED BY INTERDIFFUSION
Authors: VARAVIN VS SIDOROV YG REMESNIK VG CHIKICHEV SI NIS IE
Citation: Vs. Varavin et al., GROWTH OF CDXHG1-XTE FILMS BY VAPOR-PHASE EPITAXY OF HGTE ON CDTE SUBSTRATES FOLLOWED BY INTERDIFFUSION, Semiconductors, 28(4), 1994, pp. 348-352
THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY
Authors: SVITASHEV KK DVORETSKY SA SIDOROV YG SHVETS VA MARDEZHOV AS NIS IE VARAVIN VS LIBERMAN V REMESNIK VG
Citation: Kk. Svitashev et al., THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY, Crystal research and technology, 29(7), 1994, pp. 931-937
Risultati: 1-14 |