Authors:
VASILEV VV
VOINOV VG
ESAEV DG
ZAKHARYASH TI
KLIMENKO AG
KOZLOV AI
KRYMSKII AI
MARCHISHIN IV
OVSYUK VN
ROMASHKO LF
SVITASHEV KK
SUSLYAKOV AO
TALIPOV NK
SIDOROV YG
VARAVIN VC
DVORETSKII SA
MIKHAILOV NN
Citation: Vv. Vasilev et al., FOCAL PHOTODETECTOR ARRAYS BASED ON CDHGTE HETEROEPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES, Journal of optical technology, 65(1), 1998, pp. 68-72
Authors:
SHVETS VA
CHIKICHEV SI
PRIDACHIN DN
YAKUSHEV MV
SIDOROV YG
MARDEZHOV AS
Citation: Va. Shvets et al., ELLIPSOMETRIC STUDY OF TELLURIUM MOLECULAR-BEAM INTERACTION WITH DEHYDROGENATED VICINAL SILICON SURFACES, Thin solid films, 313, 1998, pp. 561-564
Authors:
VOITSEKHOVSKII AV
DENISOV YA
KOKHANENKO AP
VARAVIN VS
DVORETSKII SA
LIBERMAN VT
MIKHAILOV NN
SIDOROV YG
Citation: Av. Voitsekhovskii et al., CHARGE-CARRIER LIFETIME IN HG1-XCDXTE (X=0.22) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 31(7), 1997, pp. 655-657
Authors:
SVITASHEV KK
SHVETS VA
MARDEZHOV AS
DVORETSKY SA
SIDOROV YG
MIKHAILOV NN
SPESIVTSEV EV
RYCHLITSKY SV
Citation: Kk. Svitashev et al., ELLIPSOMETRY AS A POWERFUL TOOL FOR THE CONTROL OF EPITAXIAL SEMICONDUCTOR STRUCTURES IN-SITU AND EX-SITU, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 164-167
Authors:
SIDOROV YG
DVORETSKY SA
YAKUSHEV MV
MIKHAILOV NN
VARAVIN VS
LIBERMAN VI
Citation: Yg. Sidorov et al., PECULIARITIES OF THE MBE GROWTH PHYSICS AND TECHNOLOGY OF NARROW-GAP II-VI COMPOUNDS, Thin solid films, 306(2), 1997, pp. 253-265
Authors:
OVSYUK VN
REMESNIK VG
STUDENIKIN SA
SUSLYAKOV AO
TALIPOV NK
VASILEV VV
ZAHARYASH TI
SIDOROV YG
DVORETSKY SA
MIKHAYLOV NN
LIBERMAN VG
VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Infrared physics & technology, 37(3), 1996, pp. 321-323
Authors:
OVSYUK VN
VASILEV VV
ZAKHARYASH TI
REMESNIK VG
STUDENIKIN SA
SUSLYAKOV AO
TALIPOV NK
SIDOROV YG
DVORETSKII SA
MIKHAILOV NN
LIBERMAN VG
VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY, Semiconductors, 30(2), 1996, pp. 109-111
Authors:
VARAVIN VS
DVORETSKY SA
LIBERMAN VI
MIKHAILOV NN
SIDOROV YG
Citation: Vs. Varavin et al., MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY HG1-XCDXTE FILMS WITH CONTROL OF THE COMPOSITION DISTRIBUTION, Journal of crystal growth, 159(1-4), 1996, pp. 1161-1166
Citation: Ta. Gavrilova et al., LOCAL HETEROGENEITIES OF GA AND AS INTERC ALATION TO ZNSE FILMS FROM GAAS SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 21(1), 1995, pp. 72-75
Authors:
SVITASHEV KK
SHVETS VA
MARDEZHOV AS
DVORETSKII SA
SIDOROV YG
VARAVIN VS
Citation: Kk. Svitashev et al., IN-SITU ELLIPSOMETRY DUE TO GROWING THE F ILMS OF CADMIUM-MERCURY-TELLURIUM SOLID-SOLUTIONS VIA MBE TECHNIQUE, Zurnal tehniceskoj fiziki, 65(9), 1995, pp. 110-120
Authors:
VARAVIN VS
SIDOROV YG
REMESNIK VG
CHIKICHEV SI
NIS IE
Citation: Vs. Varavin et al., GROWTH OF CDXHG1-XTE FILMS BY VAPOR-PHASE EPITAXY OF HGTE ON CDTE SUBSTRATES FOLLOWED BY INTERDIFFUSION, Semiconductors, 28(4), 1994, pp. 348-352
Authors:
SVITASHEV KK
DVORETSKY SA
SIDOROV YG
SHVETS VA
MARDEZHOV AS
NIS IE
VARAVIN VS
LIBERMAN V
REMESNIK VG
Citation: Kk. Svitashev et al., THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY, Crystal research and technology, 29(7), 1994, pp. 931-937