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Results:
1-12
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Results: 12
Authors:
BOUDJANI A
SIEBER B
CLETON F
RUDRA A
Citation: A. Boudjani et al., CL AND EBIC ANALYSIS OF A P(-INGAAS())N-INGAAS/N-INP/N(+)-INP HETEROSTRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 192-198
Authors:
SIEBER B
KITTLER M
MIRI A
LAERZ J
Citation: B. Sieber et al., A STUDY OF THE INTERACTION OF ELECTRON-BEAM GENERATED EXCESS CHARGE-CARRIERS WITH A SI SIGE/SI HETEROSTRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 243-248
Authors:
CLETON F
SIEBER B
MASUT RA
ISNARD L
BONARD JM
GANIERE JD
Citation: F. Cleton et al., PHOTON RECYCLING AS THE DOMINANT PROCESS OF LUMINESCENCE GENERATION IN AN ELECTRON-BEAM EXCITED N-INP EPILAYER GROWN ON AN N(-INP SUBSTRATE()), Semiconductor science and technology, 11(5), 1996, pp. 726-734
Authors:
CLETON F
SIEBER B
LEFEBVRE A
BENSAADA A
MASUT RA
BONARD JM
GANIERE JD
AMBRI M
Citation: F. Cleton et al., TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF TENSILE-STRAINED GAXIN1-XP INP HETEROSTRUCTURES .1. SPATIAL VARIATIONS OF THE TENSILE-STRESS RELAXATION/, Journal of applied physics, 80(2), 1996, pp. 827-836
Authors:
CLETON F
SIEBER B
BENSAADA A
MASUT RA
BONARD JM
GANIERE JD
Citation: F. Cleton et al., TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF TENSILE-STRAINED GAXIN1-XP INP HETEROSTRUCTURES .2. ON THE ORIGIN OF LUMINESCENCE HETEROGENEITIES IN TENSILE-STRESS RELAXED GAXIN1-XP/INP HETEROSTRUCTURES/, Journal of applied physics, 80(2), 1996, pp. 837-845
Authors:
BOUDJANI A
SIEBER B
BOUDJANI L
Citation: A. Boudjani et al., EBIC DETERMINATION OF LATERAL DOPANT DIFFUSION AND JUNCTION DEPTH IN PLANAR DEVICES, Semiconductor science and technology, 10(8), 1995, pp. 1151-1155
Authors:
SIEBER B
Citation: B. Sieber, EBIC AND CATHODOLUMINESCENCE EVALUATION OF III-V COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 35-42
Authors:
TRAN CA
MASUT RA
BREBNER JL
JOUANNE M
SALAMANCARIBA L
SHEN CC
SIEBER B
MIRI A
Citation: Ca. Tran et al., ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF INP AND INAS INP HETEROSTRUCTURES/, Journal of crystal growth, 145(1-4), 1994, pp. 332-337
Authors:
SIEBER B
FARVACQUE JL
WANG J
STEEDS JW
Citation: B. Sieber et al., 1ST STEP OF DEGRADATION MECHANISMS IN ALGAAS GAAS LASER-LIKE STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 29-32
Authors:
SIEBER B
FARVACQUE JL
MIRI A
Citation: B. Sieber et al., CATHODOLUMINESCENCE EVIDENCE OF THE RELATIVE POSITION OF AS(G) AND GA(G) DISLOCATION-RELATED ENERGY-BANDS IN GALLIUM-ARSENIDE, Physica status solidi. a, Applied research, 138(2), 1993, pp. 673-680
Authors:
DEMEERSCHMAN C
SIEBER B
FARVACQUE JL
DRUELLE Y
Citation: C. Demeerschman et al., MICROSCALE CHARACTERIZATION OF EPITAXIAL SEMICONDUCTING HOMOLAYERS .1. CATHODOLUMINESCENCE, Microscopy microanalysis microstructures, 3(6), 1992, pp. 483-499
MICROSCALE CHARACTERIZATION OF EPITAXIAL SEMICONDUCTING HOMOLAYERS .2. ELECTRON-BEAM-INDUCED CURRENT
Authors:
CLETON F
SIEBER B
LORRIAUX JL
Citation: F. Cleton et al., MICROSCALE CHARACTERIZATION OF EPITAXIAL SEMICONDUCTING HOMOLAYERS .2. ELECTRON-BEAM-INDUCED CURRENT, Microscopy microanalysis microstructures, 3(6), 1992, pp. 501-516
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