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Results: 1-10 |
Results: 10
RELATIONSHIP BETWEEN POSITRON BULK LIFETIME AND ATOMIC VOLUME OF TETRAHEDRALLY COORDINATED SEMICONDUCTORS
Authors: SIETHOFF H
Citation: H. Siethoff, RELATIONSHIP BETWEEN POSITRON BULK LIFETIME AND ATOMIC VOLUME OF TETRAHEDRALLY COORDINATED SEMICONDUCTORS, Physica status solidi. b, Basic research, 205(1), 1998, pp. 3-4
DEBYE TEMPERATURE, SELF-DIFFUSION AND ELASTIC-CONSTANTS OF INTERMETALLIC COMPOUNDS
Authors: SIETHOFF H
Citation: H. Siethoff, DEBYE TEMPERATURE, SELF-DIFFUSION AND ELASTIC-CONSTANTS OF INTERMETALLIC COMPOUNDS, Intermetallics, 5(8), 1997, pp. 625-632
DIFFUSION, DEBYE TEMPERATURE AND ELASTIC-CONSTANTS OF CUBIC METALS
Authors: SIETHOFF H
Citation: H. Siethoff, DIFFUSION, DEBYE TEMPERATURE AND ELASTIC-CONSTANTS OF CUBIC METALS, Physica status solidi. b, Basic research, 200(1), 1997, pp. 57-66
DEBYE-TEMPERATURE-ELASTIC-CONSTANTS RELATIONSHIP FOR MATERIALS WITH HEXAGONAL AND TETRAGONAL SYMMETRY
Authors: SIETHOFF H AHLBORN K
Citation: H. Siethoff et K. Ahlborn, DEBYE-TEMPERATURE-ELASTIC-CONSTANTS RELATIONSHIP FOR MATERIALS WITH HEXAGONAL AND TETRAGONAL SYMMETRY, Journal of applied physics, 79(6), 1996, pp. 2968-2974
THE DEPENDENCE OF THE DEBYE TEMPERATURE ON THE ELASTIC-CONSTANTS
Authors: SIETHOFF H AHLBORN K
Citation: H. Siethoff et K. Ahlborn, THE DEPENDENCE OF THE DEBYE TEMPERATURE ON THE ELASTIC-CONSTANTS, Physica status solidi. b, Basic research, 190(1), 1995, pp. 179-191
DYNAMICAL RECOVERY OF INSB(123) BETWEEN 340-DEGREES-C AND 510-DEGREES-C
Authors: AHLBORN K BRION HG SIETHOFF H
Citation: K. Ahlborn et al., DYNAMICAL RECOVERY OF INSB(123) BETWEEN 340-DEGREES-C AND 510-DEGREES-C, Philosophical magazine letters, 70(2), 1994, pp. 87-92
A NEW REGIME OF DYNAMIC RECOVERY IN THE HIGH-TEMPERATURE DEFORMATION OF SEMICONDUCTORS
Authors: SIETHOFF H AHLBORN K
Citation: H. Siethoff et K. Ahlborn, A NEW REGIME OF DYNAMIC RECOVERY IN THE HIGH-TEMPERATURE DEFORMATION OF SEMICONDUCTORS, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(4), 1994, pp. 793-804
CORRELATION BETWEEN THE BAND-GAP OF SEMICONDUCTORS AND THERMAL-ACTIVATION PARAMETERS OF PLASTICITY
Authors: SIETHOFF H
Citation: H. Siethoff, CORRELATION BETWEEN THE BAND-GAP OF SEMICONDUCTORS AND THERMAL-ACTIVATION PARAMETERS OF PLASTICITY, Applied physics letters, 65(2), 1994, pp. 174-176
DYNAMICAL RECOVERY, DISLOCATION MOBILITY, AND DIFFUSION IN UNDOPED SEMICONDUCTORS
Authors: SIETHOFF H
Citation: H. Siethoff, DYNAMICAL RECOVERY, DISLOCATION MOBILITY, AND DIFFUSION IN UNDOPED SEMICONDUCTORS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 591-599
THE YIELD-POINT OF IN-DOPED GAAS BETWEEN 500-DEGREES-C AND 900-DEGREES-C
Authors: SIETHOFF H BRION HG VOLKL J
Citation: H. Siethoff et al., THE YIELD-POINT OF IN-DOPED GAAS BETWEEN 500-DEGREES-C AND 900-DEGREES-C, Journal of applied physics, 74(1), 1993, pp. 153-158
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