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Results: 1-25 | 26-50 | 51-67
Results: 1-25/67
MODELING OF SELF-SUSTAINED PULSATIONS IN NONUNIFORMLY PUMPED SEMICONDUCTOR-LASERS
Authors: SWOGER JH SIMMONS JG THOMPSON DA
Citation: Jh. Swoger et al., MODELING OF SELF-SUSTAINED PULSATIONS IN NONUNIFORMLY PUMPED SEMICONDUCTOR-LASERS, IEE proceedings. Optoelectronics, 145(4), 1998, pp. 217-222
MAXIMUM OPERATING TEMPERATURE OF THE 1.3 MU-M STRAINED-LAYER MULTIPLE-QUANTUM-WELL INGAASP LASERS
Authors: SMETONA S ELENKRIG BB SIMMONS JG MAKINO T EVANS JD
Citation: S. Smetona et al., MAXIMUM OPERATING TEMPERATURE OF THE 1.3 MU-M STRAINED-LAYER MULTIPLE-QUANTUM-WELL INGAASP LASERS, Journal of applied physics, 84(8), 1998, pp. 4076-4078
DETERMINATION OF ACTIVE-REGION LEAKAGE CURRENTS IN RIDGE-WAVE-GUIDE STRAINED-LAYER QUANTUM-WELL LASERS BY VARYING THE RIDGE WIDTH
Authors: LETAL GJ SIMMONS JG EVANS JD LI GP
Citation: Gj. Letal et al., DETERMINATION OF ACTIVE-REGION LEAKAGE CURRENTS IN RIDGE-WAVE-GUIDE STRAINED-LAYER QUANTUM-WELL LASERS BY VARYING THE RIDGE WIDTH, IEEE journal of quantum electronics, 34(3), 1998, pp. 512-518
A SYSTEMATIC EMPIRICAL-STUDY OF THE EFFECT OF WELL NUMBER AND LENGTH ON THE TEMPERATURE SENSITIVITY OF THE THRESHOLD CURRENT IN INGAASP-INPMQW LASERS
Authors: PROSYK K SIMMONS JG EVANS JD
Citation: K. Prosyk et al., A SYSTEMATIC EMPIRICAL-STUDY OF THE EFFECT OF WELL NUMBER AND LENGTH ON THE TEMPERATURE SENSITIVITY OF THE THRESHOLD CURRENT IN INGAASP-INPMQW LASERS, IEEE journal of quantum electronics, 34(3), 1998, pp. 535-539
EFFECT OF VARYING BARRIER HEIGHT ON THE OPERATIONAL CHARACTERISTICS OF 1.3-MU-M STRAINED-LAYER MQW LASERS
Authors: HAZELL JF SIMMONS JG EVANS JD BLAAUW C
Citation: Jf. Hazell et al., EFFECT OF VARYING BARRIER HEIGHT ON THE OPERATIONAL CHARACTERISTICS OF 1.3-MU-M STRAINED-LAYER MQW LASERS, IEEE journal of quantum electronics, 34(12), 1998, pp. 2358-2363
WET CHEMICAL ETCHING FOR V-GROOVES INTO INP SUBSTRATES
Authors: WANG J THOMPSON DK SIMMONS JG
Citation: J. Wang et al., WET CHEMICAL ETCHING FOR V-GROOVES INTO INP SUBSTRATES, Journal of the Electrochemical Society, 145(8), 1998, pp. 2931-2937
THERMAL-BEHAVIOR OF TENSILE-STRAIN INGAASP-INP LASERS WITH VARYING RIDGEWIDTH
Authors: HUANG R SIMMONS JG JESSOP PE EVANS J
Citation: R. Huang et al., THERMAL-BEHAVIOR OF TENSILE-STRAIN INGAASP-INP LASERS WITH VARYING RIDGEWIDTH, IEEE photonics technology letters, 9(7), 1997, pp. 889-891
A RELATIONSHIP FOR TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR 1.3-MU-M COMPRESSIVELY STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS
Authors: HUANG R SIMMONS JG JESSOP PE EVANS J
Citation: R. Huang et al., A RELATIONSHIP FOR TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR 1.3-MU-M COMPRESSIVELY STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS, IEEE photonics technology letters, 9(7), 1997, pp. 892-894
GROWTH OF INGAAS INP STRUCTURES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON SIO2-PATTERNED SUBSTRATES FOR OPTOELECTRONIC APPLICATIONS/
Authors: NAGY SC ROBINSON BJ THOMPSON DA SIMMONS JG NUBAN MF KRAWCZYK SK BUCHHEIT M BLANCHET RC
Citation: Sc. Nagy et al., GROWTH OF INGAAS INP STRUCTURES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON SIO2-PATTERNED SUBSTRATES FOR OPTOELECTRONIC APPLICATIONS/, Journal of crystal growth, 177(1-2), 1997, pp. 1-5
MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAS INGAASP QUANTUM WIRES ON V-GROOVED INP SUBSTRATES WITH (111)-SIDEWALLS/
Authors: WANG J THOMPSON DA ROBINSON BJ SIMMONS JG
Citation: J. Wang et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAS INGAASP QUANTUM WIRES ON V-GROOVED INP SUBSTRATES WITH (111)-SIDEWALLS/, Journal of crystal growth, 175, 1997, pp. 793-798
THE MORPHOLOGY OF INP INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ONTO V-GROOVED INP SUBSTRATES/
Authors: WANG J ROBINSON BJ THOMPSON DA SIMMONS JG
Citation: J. Wang et al., THE MORPHOLOGY OF INP INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ONTO V-GROOVED INP SUBSTRATES/, Journal of crystal growth, 173(3-4), 1997, pp. 307-314
BAND-GAP MODIFICATION IN NE-ION IMPLANTED IN1-XGAXAS()INP AND INASYP1-Y/INP QUANTUM-WELL STRUCTURES/
Authors: WAN JZ SIMMONS JG THOMPSON DA
Citation: Jz. Wan et al., BAND-GAP MODIFICATION IN NE-ION IMPLANTED IN1-XGAXAS()INP AND INASYP1-Y/INP QUANTUM-WELL STRUCTURES/, Journal of applied physics, 81(2), 1997, pp. 765-770
WELL NUMBER, LENGTH, AND TEMPERATURE-DEPENDENCE OF EFFICIENCY AND LOSS IN INGAASP-INP COMPRESSIVELY STRAINED MQW RIDGE-WAVE-GUIDE LASERS AT1.3 MU-M
Authors: PROSYK K SIMMONS JG EVANS JD
Citation: K. Prosyk et al., WELL NUMBER, LENGTH, AND TEMPERATURE-DEPENDENCE OF EFFICIENCY AND LOSS IN INGAASP-INP COMPRESSIVELY STRAINED MQW RIDGE-WAVE-GUIDE LASERS AT1.3 MU-M, IEEE journal of quantum electronics, 33(8), 1997, pp. 1360-1368
INSULIN-LIKE-GROWTH-FACTOR-II (IGF-II) EXPRESSED BY INTESTINAL FIBROBLASTS IS A POTENT MITOGEN FOR INTESTINAL EPITHELIAL-CELLS
Authors: SIMMONS JG PUCILOWSKA J LUND PK
Citation: Jg. Simmons et al., INSULIN-LIKE-GROWTH-FACTOR-II (IGF-II) EXPRESSED BY INTESTINAL FIBROBLASTS IS A POTENT MITOGEN FOR INTESTINAL EPITHELIAL-CELLS, Gastroenterology, 112(4), 1997, pp. 906-906
BAND-GAP BLUE-SHIFT BY IMPURITY-FREE VACANCY DIFFUSION IN 1.5-MU-M STRAINED-INGAASP INP MULTIPLE-QUANTUM-WELL LASER STRUCTURE/
Authors: CAO N ELENKRIG BB SIMMONS JG THOMPSON DA PUETZ N
Citation: N. Cao et al., BAND-GAP BLUE-SHIFT BY IMPURITY-FREE VACANCY DIFFUSION IN 1.5-MU-M STRAINED-INGAASP INP MULTIPLE-QUANTUM-WELL LASER STRUCTURE/, Applied physics letters, 70(25), 1997, pp. 3419-3421
HIGH-RESPONSIVITY INGAAS INP-BASED MSM PHOTODETECTOR OPERATING AT 1.3-MU-M WAVELENGTH/
Authors: MATIN MA SONG KC ROBINSON BJ SIMMONS JG THOMPSON DA
Citation: Ma. Matin et al., HIGH-RESPONSIVITY INGAAS INP-BASED MSM PHOTODETECTOR OPERATING AT 1.3-MU-M WAVELENGTH/, Microwave and optical technology letters, 12(6), 1996, pp. 310-313
HIGH-PERFORMANCE INP INGAAS-BASED MSM PHOTODETECTOR OPERATING AT 1.3-1.5-MU-M/
Authors: SONG KC MATIN MA ROBINSON B SIMMONS JG THOMPSON DA MASCHER P
Citation: Kc. Song et al., HIGH-PERFORMANCE INP INGAAS-BASED MSM PHOTODETECTOR OPERATING AT 1.3-1.5-MU-M/, Solid-state electronics, 39(9), 1996, pp. 1283-1287
HIGH-ENERGY HE+ BOMBARDMENT OF N-TYPE INP
Authors: SARGUNAS V THOMPSON DA SIMMONS JG
Citation: V. Sargunas et al., HIGH-ENERGY HE+ BOMBARDMENT OF N-TYPE INP, Solid-state electronics, 39(7), 1996, pp. 977-980
VERY-LOW DARK CURRENT INGAP GAAS MSM-PHOTODETECTOR USING SEMITRANSPARENT AND OPAQUE CONTACTS/
Authors: MATIN MA SONG KC ROBINSON BJ SIMMONS JG THOMPSON DA GOUIN F
Citation: Ma. Matin et al., VERY-LOW DARK CURRENT INGAP GAAS MSM-PHOTODETECTOR USING SEMITRANSPARENT AND OPAQUE CONTACTS/, Electronics Letters, 32(8), 1996, pp. 766-767
A 3-TERMINAL N-CHANNEL INGAASP-INP-BASED DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH (DOES)
Authors: TAN E SIMMONS JG THOMPSON DA BLAAUW C
Citation: E. Tan et al., A 3-TERMINAL N-CHANNEL INGAASP-INP-BASED DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH (DOES), Canadian journal of physics, 74, 1996, pp. 16-19
SCHOTTKY CONTACTS TO GAXIN1-XP BARRIER ENHANCEMENT LAYERS ON INP AND INGAAS
Authors: PANG Z MASCHER P SIMMONS JG THOMPSON DA
Citation: Z. Pang et al., SCHOTTKY CONTACTS TO GAXIN1-XP BARRIER ENHANCEMENT LAYERS ON INP AND INGAAS, Canadian journal of physics, 74, 1996, pp. 104-107
AN INVESTIGATION INTO THE TEMPERATURE SENSITIVITY OF STRAINED AND UNSTRAINED MULTIPLE-QUANTUM-WELL, LONG-WAVELENGTH LASERS - NEW INSIGHT AND METHODS OF CHARACTERIZATION
Authors: EVANS JD SIMMONS JG THOMPSON DA PUETZ N MAKINO T CHIK G
Citation: Jd. Evans et al., AN INVESTIGATION INTO THE TEMPERATURE SENSITIVITY OF STRAINED AND UNSTRAINED MULTIPLE-QUANTUM-WELL, LONG-WAVELENGTH LASERS - NEW INSIGHT AND METHODS OF CHARACTERIZATION, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 275-284
THE DEPENDENCE OF THE MAXIMUM OPERATING TEMPERATURE OF LONG-WAVELENGTH SEMICONDUCTOR-LASERS ON PHYSICAL AND MATERIAL DEVICE PARAMETERS
Authors: EVANS JD SIMMONS JG
Citation: Jd. Evans et Jg. Simmons, THE DEPENDENCE OF THE MAXIMUM OPERATING TEMPERATURE OF LONG-WAVELENGTH SEMICONDUCTOR-LASERS ON PHYSICAL AND MATERIAL DEVICE PARAMETERS, IEEE photonics technology letters, 7(6), 1995, pp. 614-616
INSULIN-LIKE GROWTH-FACTOR-I AND EPIDERMAL GROWTH-FACTOR INTERACT TO REGULATE GROWTH AND GENE-EXPRESSION IN IEC-6 INTESTINAL EPITHELIAL-CELLS
Authors: SIMMONS JG HOYT EC WESTWICK JK BRENNER DA PUCILOWSKA JB LUND PK
Citation: Jg. Simmons et al., INSULIN-LIKE GROWTH-FACTOR-I AND EPIDERMAL GROWTH-FACTOR INTERACT TO REGULATE GROWTH AND GENE-EXPRESSION IN IEC-6 INTESTINAL EPITHELIAL-CELLS, Molecular endocrinology, 9(9), 1995, pp. 1157-1165
VOLATILE PRODUCTS AND END-POINT DETECTION IN REACTIVE ION ETCHING OF III-V COMPOUNDS WITH A BROAD-BEAM ECR SOURCE
Authors: MELVILLE DL BUDINAVICIUS J THOMPSON DA SIMMONS JG
Citation: Dl. Melville et al., VOLATILE PRODUCTS AND END-POINT DETECTION IN REACTIVE ION ETCHING OF III-V COMPOUNDS WITH A BROAD-BEAM ECR SOURCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 179-182
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