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Citation: Lb. Proekt et al., MODELING OF MASS-TRANSFER UNDER CONDITIONS OF LOCAL GAS-PHASE EPITAXYTHROUGH A MASK, Semiconductors, 31(4), 1997, pp. 401-404

Authors: MELEHIN VG MASLOV AY SINITSYN MA

Citation: Vg. Melehin et al., PECULIARITIES OF DISORDER-INDUCED RAMAN-SCATTERING FROM ACOUSTIC FREQUENCY GAPS IN ALAS GAAS SUPERLATTICES/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1997, pp. 51-60

Authors: EVSTROPOV VV KALITEEVSKII MA LIPKO AL SINITSYN MA TSARENKOV BV SHERNYAKOV YM YAVICH BS

Citation: Vv. Evstropov et al., SEMICONDUCTOR BRAGG REFLECTOR WITH ABSORBING LAYERS, Semiconductors, 30(1), 1996, pp. 57-59

Authors: KALITEEVSKI MA KAVOKIN AV MINTAIROV AM POZINA GR SINITSYN MA

Citation: Ma. Kaliteevski et al., BANDGAP ANOMALY AND APPEARANCE OF A MONOLAYER SUPERLATTICE IN INGAAS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Semiconductor science and technology, 10(5), 1995, pp. 624-626

Authors: BUMAI YA YAVICH BS SINITSYN MA ULYASHIN AG SHLOPAK NV VORONIN VF

Citation: Ya. Bumai et al., EFFECT OF HYDROGENATION ON THE PHOTOLUMINESCENCE OF GAAS ALGAAS QUANTUM-WELL STRUCTURES/, Semiconductors, 28(2), 1994, pp. 166-170