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Results: 1-9 |
Results: 9
SURFACE SEGREGATION OF SI IN DELTA-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: VOGELE B STANLEY CR SKURAS E LONG AR JOHNSON EA
Citation: B. Vogele et al., SURFACE SEGREGATION OF SI IN DELTA-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 229-233
ANISOTROPIC PIEZOELECTRIC EFFECT IN LATERAL SURFACE SUPERLATTICES
Authors: SKURAS E LONG AR LARKIN IA DAVIES JH HOLLAND MC
Citation: E. Skuras et al., ANISOTROPIC PIEZOELECTRIC EFFECT IN LATERAL SURFACE SUPERLATTICES, Applied physics letters, 70(7), 1997, pp. 871-873
1.2 K SHUBNIKOV-DE HAAS MEASUREMENTS AND SELF-CONSISTENT CALCULATION OF SILICON SPREADING IN DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: MCELHINNEY M VOGELE B HOLLAND MC STANLEY CR SKURAS E LONG AR JOHNSON EA
Citation: M. Mcelhinney et al., 1.2 K SHUBNIKOV-DE HAAS MEASUREMENTS AND SELF-CONSISTENT CALCULATION OF SILICON SPREADING IN DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 68(7), 1996, pp. 940-942
ELECTRON-TRANSPORT IN SHALLOW HETEROSTRUCTURES WITH ALGAAS AND ALAS BARRIERS
Authors: SKURAS E HOLLAND MC BARTON CJ DAVIES JH LONG AR
Citation: E. Skuras et al., ELECTRON-TRANSPORT IN SHALLOW HETEROSTRUCTURES WITH ALGAAS AND ALAS BARRIERS, Semiconductor science and technology, 10(7), 1995, pp. 922-929
THE EFFECT OF GROWTH TEMPERATURE, DELTA-DOPING AND BARRIER COMPOSITION ON MOBILITIES IN SHALLOW ALGAAS-GAAS 2-DIMENSIONAL ELECTRON GASES
Authors: HOLLAND MC SKURAS E DAVIES JH LARKIN IA LONG AR STANLEY CR
Citation: Mc. Holland et al., THE EFFECT OF GROWTH TEMPERATURE, DELTA-DOPING AND BARRIER COMPOSITION ON MOBILITIES IN SHALLOW ALGAAS-GAAS 2-DIMENSIONAL ELECTRON GASES, Journal of crystal growth, 150(1-4), 1995, pp. 1215-1219
QUANTUM TRANSPORT MEASUREMENTS ON SI DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: MCELHINNEY M SKURAS E HOLMES SN JOHNSON EA LONG AR STANLEY CR
Citation: M. Mcelhinney et al., QUANTUM TRANSPORT MEASUREMENTS ON SI DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 266-270
POTENTIAL MODULATION UNDER LATERAL SURFACE SUPERLATTICES
Authors: CUSCO R SKURAS E VALLIS S HOLLAND MC LONG AR BEAUMONT SP LARKIN IA DAVIES JH
Citation: R. Cusco et al., POTENTIAL MODULATION UNDER LATERAL SURFACE SUPERLATTICES, Superlattices and microstructures, 16(3), 1994, pp. 283-286
ANHARMONIC PERIODIC MODULATION IN LATERAL SURFACE SUPERLATTICES
Authors: CUSCO R HOLLAND MC DAVIES JH LARKIN IA SKURAS E LONG AR BEAUMONT SP
Citation: R. Cusco et al., ANHARMONIC PERIODIC MODULATION IN LATERAL SURFACE SUPERLATTICES, Surface science, 305(1-3), 1994, pp. 643-647
THE UTILIZATION OF DX CENTERS IN HIGH-PRESSURE STUDIES OF LOW-DIMENSIONAL DOPING STRUCTURES IN GAAS
Authors: STRADLING RA JOHNSON EA MACKINNON A KUMAR R SKURAS E HARRIS JJ
Citation: Ra. Stradling et al., THE UTILIZATION OF DX CENTERS IN HIGH-PRESSURE STUDIES OF LOW-DIMENSIONAL DOPING STRUCTURES IN GAAS, Semiconductor science and technology, 6(10B), 1991, pp. 137-142
Risultati: 1-9 |