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Results:
1-7
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Results: 7
Authors:
PALMOUR JW
LIPKIN LA
SINGH R
SLATER DB
SUVOROV AV
CARTER CH
Citation: Jw. Palmour et al., SIC DEVICE TECHNOLOGY - REMAINING ISSUES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1400-1404
Authors:
LEVINSHTEIN ME
RUMYANTSEV SL
PALMOUR JW
SLATER DB
Citation: Me. Levinshtein et al., LOW-FREQUENCY NOISE IN 4H SILICON-CARBIDE, Journal of applied physics, 81(4), 1997, pp. 1758-1762
Authors:
SLATER DB
ENQUIST PM
HUTCHBY JA
MORRIS AS
TREW RJ
Citation: Db. Slater et al., LOW EMITTER RESISTANCE GAAS BASED HBTS WITHOUT INGAAS CAPS, IEEE electron device letters, 15(5), 1994, pp. 154-156
Authors:
SLATER DB
ENQUIST PM
HUTCHBY JA
MORRIS AS
TREW RJ
Citation: Db. Slater et al., PNP HBT WITH 66 GHZ F(MAX), IEEE electron device letters, 15(3), 1994, pp. 91-93
Authors:
SLATER DB
ENQUIST PM
HUTCHBY JA
REED FE
MORRIS AS
KOLBAS RM
TREW RJ
LUJAN AS
SWART JW
Citation: Db. Slater et al., MONOLITHICALLY INTEGRATED SQW LASER AND HBT LASER DRIVER VIA SELECTIVE OMVPE REGROWTH, IEEE photonics technology letters, 5(7), 1993, pp. 791-794
Authors:
ENQUIST PM
SLATER DB
HUTCHBY JA
MORRIS AS
TREW RJ
Citation: Pm. Enquist et al., SELF-ALIGNED ALGAAS GAAS HBT WITH SELECTIVELY REGROWN OMVPE EMITTER/, IEEE electron device letters, 14(6), 1993, pp. 295-297
Authors:
ENQUIST PM
SLATER DB
SWART JW
Citation: Pm. Enquist et al., COMPLEMENTARY ALGAAS GAAS HBT I-2-L (CHI2L) TECHNOLOGY/, IEEE electron device letters, 13(4), 1992, pp. 180-185
Risultati:
1-7
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