AAAAAA
Results:
1-11
|
Results: 11
Authors:
JELEN C
SLIVKEN S
DAVID T
RAZEGHI M
BROWN GJ
Citation: C. Jelen et al., NOISE PERFORMANCE OF INGAAS-INP QUANTUM-WELL INFRARED PHOTODETECTORS, IEEE journal of quantum electronics, 34(7), 1998, pp. 1124-1128
Authors:
JELEN C
SLIVKEN S
GUZMAN V
RAZEGHI M
BROWN GJ
Citation: C. Jelen et al., INGAALAS-INP QUANTUM-WELL INFRARED PHOTODETECTORS FOR 8-20-MU-M WAVELENGTHS, IEEE journal of quantum electronics, 34(10), 1998, pp. 1873-1876
Authors:
BESIKCI C
CIVAN Y
OZDER S
SEN O
JELEN C
SLIVKEN S
RAZEGHI M
Citation: C. Besikci et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF GA0.51IN0.49P INXGA1-XAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES/, Semiconductor science and technology, 12(11), 1997, pp. 1472-1478
Authors:
SLIVKEN S
JELEN C
RYBALTOWSKI A
DIAZ J
RAZEGHI M
Citation: S. Slivken et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF AN 8.5 MU-M QUANTUM CASCADE LASER, Applied physics letters, 71(18), 1997, pp. 2593-2595
Authors:
JELEN C
SLIVKEN S
HOFF J
RAZEGHI M
BROWN GJ
Citation: C. Jelen et al., ALUMINUM FREE GAINP GAAS QUANTUM-WELL INFRARED PHOTODETECTORS FOR LONG-WAVELENGTH DETECTION/, Applied physics letters, 70(3), 1997, pp. 360-362
Authors:
YI HJ
DIAZ J
ELIASHEVICH I
LUKAS G
KIM S
WU D
ERDTHMANN M
JELEN C
SLIVKEN S
WANG LJ
RAZEGHI M
Citation: Hj. Yi et al., COMPARISON OF GAIN AND THRESHOLD CURRENT-DENSITY FOR INGAASP GAAS (LAMBDA=808NM) LASERS WITH DIFFERENT QUANTUM-WELL THICKNESS/, Journal of applied physics, 79(11), 1996, pp. 8832-8834
Authors:
SINGH G
MICHEL E
JELEN C
SLIVKEN S
XU J
BOVE P
FERGUSON I
RAZEGHI M
Citation: G. Singh et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB FOR P-I-N PHOTODETECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 782-785
Authors:
HOFF J
JELEN C
SLIVKEN S
BIGAN E
RAZEGHI M
BROWN GJ
Citation: J. Hoff et al., ANALYSIS OF SPECTRAL RESPONSE IN P-TYPE GAAS GAINP QWIPS/, Superlattices and microstructures, 18(4), 1995, pp. 249-257
Authors:
JELEN C
SLIVKEN S
HE XG
RAZEGHI M
SHASTRY S
Citation: C. Jelen et al., CHARACTERIZATION OF HIGH-QUALITY GAINP GAAS SUPERLATTICES GROWN ON GAAS AND SI SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1113-1115
Authors:
BROWN GJ
HEGDE SM
HOFF J
JELEN C
SLIVKEN S
MICHEL E
DUCHEMIN O
BIGAN E
RAZEGHI M
Citation: Gj. Brown et al., INTERSUBBAND HOLE ABSORPTION IN GAAS-GALNP QUANTUM-WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(9), 1994, pp. 1130-1132
Authors:
MICHEL E
SINGH G
SLIVKEN S
BESIKCI C
BOVE P
FERGUSON I
RAZEGHI M
Citation: E. Michel et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB, Applied physics letters, 65(26), 1994, pp. 3338-3340
Risultati:
1-11
|