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Results: 1-18 |
Results: 18
MECHANISMS OF PHOTOCURRENT AMPLIFICATION IN ISOTYPIC N(-GASB-N(O)-GAINASSB-N(+)-GAALASSB HETEROSTRUCTURES())
Authors: SLOBODCHIKOV SV SALIKHOV KM YAKOVLEV YP SAMORUKOV BE
Citation: Sv. Slobodchikov et al., MECHANISMS OF PHOTOCURRENT AMPLIFICATION IN ISOTYPIC N(-GASB-N(O)-GAINASSB-N(+)-GAALASSB HETEROSTRUCTURES()), Technical physics letters, 24(5), 1998, pp. 386-387
CURRENT TRANSPORT IN POROUS P-SI AND PD-POROUS SI STRUCTURES
Authors: SLOBODCHIKOV SV SALIKHOV KM RUSSU EV
Citation: Sv. Slobodchikov et al., CURRENT TRANSPORT IN POROUS P-SI AND PD-POROUS SI STRUCTURES, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 960-962
LONGITUDINAL PHOTOEFFECT IN IN0.53GA0.47AS P-N-JUNCTIONS
Authors: SLOBODCHIKOV SV SALIKHOV KM RUSSU EV
Citation: Sv. Slobodchikov et al., LONGITUDINAL PHOTOEFFECT IN IN0.53GA0.47AS P-N-JUNCTIONS, Semiconductors, 31(7), 1997, pp. 733-734
ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF A PD-P(0)-SI-P-SI STRUCTURE WITH A DISORDERED INTERMEDIATE P(0) LAYER
Authors: SLOBODCHIKOV SV SALIKHOV KM RUSSU EV MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF A PD-P(0)-SI-P-SI STRUCTURE WITH A DISORDERED INTERMEDIATE P(0) LAYER, Semiconductors, 31(1), 1997, pp. 11-14
PHOTODIODES BASED ON INAS1-XSBX SOLID-SOLUTIONS FOR THE SPECTRAL BANDIN THE RANGE 3-5 MU-M
Authors: MIKHAILOVA MP STUS NM SLOBODCHIKOV SV ZOTOVA HV MATVEEV BA TALALAKIN GN
Citation: Mp. Mikhailova et al., PHOTODIODES BASED ON INAS1-XSBX SOLID-SOLUTIONS FOR THE SPECTRAL BANDIN THE RANGE 3-5 MU-M, Semiconductors, 30(9), 1996, pp. 845-848
ELECTRIC AND PHOTOELECTRIC CHARACTERISTICS OF A HYBRID ISOTYPIC P-INP-P-INGAAS HETEROSTRUCTURE WITH A PD-P-INP SCHOTTKY-BARRIER
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRIC AND PHOTOELECTRIC CHARACTERISTICS OF A HYBRID ISOTYPIC P-INP-P-INGAAS HETEROSTRUCTURE WITH A PD-P-INP SCHOTTKY-BARRIER, Semiconductors, 30(8), 1996, pp. 725-729
MECHANISM OF CURRENT TRANSPORT AND PHOTOELECTRIC CHARACTERISTICS OF PD-SIN-P-SI STRUCTURES
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., MECHANISM OF CURRENT TRANSPORT AND PHOTOELECTRIC CHARACTERISTICS OF PD-SIN-P-SI STRUCTURES, Semiconductors, 30(4), 1996, pp. 370-372
ELECTRICAL-PROPERTIES OF METAL-SEMICONDUCTOR DIODE STRUCTURES BASED ON DISORDERED GAP LAYERS
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRICAL-PROPERTIES OF METAL-SEMICONDUCTOR DIODE STRUCTURES BASED ON DISORDERED GAP LAYERS, Semiconductors, 30(2), 1996, pp. 123-126
TEMPERATURE-DEPENDENCE OF PHOTORESPONSE A CCELERATION OF PHOTOFLOW OFP-INP-P-INGAAS HYBRID HETEROSTRUCTURE WITH PD-P-INP SCHOTTKY DIODE
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM
Citation: Sv. Slobodchikov et al., TEMPERATURE-DEPENDENCE OF PHOTORESPONSE A CCELERATION OF PHOTOFLOW OFP-INP-P-INGAAS HYBRID HETEROSTRUCTURE WITH PD-P-INP SCHOTTKY DIODE, Pis'ma v Zurnal tehniceskoj fiziki, 22(17), 1996, pp. 41-44
UNCOOLED PHOTODIODES BASED ON INASSBP INA S FOR THE SPECTRAL RANGE OF3-5 MU-M/
Authors: MIKHAILOVA MP SLOBODCHIKOV SV STOYANOV ND STUS NM YAKOVLEV YP
Citation: Mp. Mikhailova et al., UNCOOLED PHOTODIODES BASED ON INASSBP INA S FOR THE SPECTRAL RANGE OF3-5 MU-M/, Pis'ma v Zurnal tehniceskoj fiziki, 22(16), 1996, pp. 63-66
CURRENT TRANSPORT IN PD-SIO2-N(P)-SI MIS STRUCTURES AND A 2ND MECHANISM FOR PHOTOCURRENT AMPLIFICATION
Authors: SLOBODCHIKOV SV RUSSU EB SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., CURRENT TRANSPORT IN PD-SIO2-N(P)-SI MIS STRUCTURES AND A 2ND MECHANISM FOR PHOTOCURRENT AMPLIFICATION, Semiconductors, 29(8), 1995, pp. 791-794
P-INP-P-INGAAS HYBRID ISOTOPIC HETEROSTRU CTURE WITH SCHOTTKY DIODES AS THE DETECTOR OF NEAR IR EMISSION AND HYDROGEN
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., P-INP-P-INGAAS HYBRID ISOTOPIC HETEROSTRU CTURE WITH SCHOTTKY DIODES AS THE DETECTOR OF NEAR IR EMISSION AND HYDROGEN, Pis'ma v Zurnal tehniceskoj fiziki, 21(19), 1995, pp. 50-54
PD-P-GAP DIODE STRUCTURES - ELECTRICAL AND PHOTOELECTRIC CHARACTERISTICS AND EFFECT OF HYDROGEN ON THEM
Authors: SLOBODCHIKOV SV KOVALEVSKAYA GG MEREDOV MM RUSSU EV SALIKHOV KM
Citation: Sv. Slobodchikov et al., PD-P-GAP DIODE STRUCTURES - ELECTRICAL AND PHOTOELECTRIC CHARACTERISTICS AND EFFECT OF HYDROGEN ON THEM, Semiconductors, 28(7), 1994, pp. 659-661
CURRENT TRANSPORT MECHANISM IN N-GAP DIODE STRUCTURES WITH VACUUM-DEPOSITED PALLADIUM
Authors: SLOBODCHIKOV SV SALIKHOV KM SAMORUKOV BE RUSSU EV KOVALEVSKAYA GG
Citation: Sv. Slobodchikov et al., CURRENT TRANSPORT MECHANISM IN N-GAP DIODE STRUCTURES WITH VACUUM-DEPOSITED PALLADIUM, Semiconductors, 28(2), 1994, pp. 143-145
LOW-FREQUENCY OSCILLATIONS OF THE PHOTOCURRENT IN INP(FE) IN A MAGNETIC-FIELD
Authors: SLOBODCHIKOV SV SALIKHOV KM KOVALEVSKAYA GG
Citation: Sv. Slobodchikov et al., LOW-FREQUENCY OSCILLATIONS OF THE PHOTOCURRENT IN INP(FE) IN A MAGNETIC-FIELD, Semiconductors, 28(2), 1994, pp. 220-221
HYDROGEN EFFECT ON PHOTOVOLTAIC AND PHOTO DIODE SENSITIVITY OF PD-SIO2-N(P)-SI TUNNEL STRUCTURES
Authors: SLOBODCHIKOV SV KOVALEVSKAYA GG SALIKHOV KM
Citation: Sv. Slobodchikov et al., HYDROGEN EFFECT ON PHOTOVOLTAIC AND PHOTO DIODE SENSITIVITY OF PD-SIO2-N(P)-SI TUNNEL STRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 20(10), 1994, pp. 66-70
MULTIPLICATION OF PHOTOCURRENT IN PD-SIO2-N(P)-SI DIODE STRUCTURES
Authors: SLOBODCHIKOV SV KOVALEVSKAYA GG PENTSOV AV SALIKHOV KM
Citation: Sv. Slobodchikov et al., MULTIPLICATION OF PHOTOCURRENT IN PD-SIO2-N(P)-SI DIODE STRUCTURES, Semiconductors, 27(7), 1993, pp. 669-670
SI MDS PHOTODETECTOR AS THE HYDROGEN DETE CTOR
Authors: KOVALEVSKAYA GG MEREDOV MM RUSSU EV SALIKHOV KM SLOBODCHIKOV SV
Citation: Gg. Kovalevskaya et al., SI MDS PHOTODETECTOR AS THE HYDROGEN DETE CTOR, Zurnal tehniceskoj fiziki, 63(2), 1993, pp. 185-190
Risultati: 1-18 |