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Results: 10

NUCLEAR-MAGNETIC-RESONANCE SPECTRA OF SN-119 AND TE-125 IN SNTE AND SNTE-MN

Authors: SLYNKO VV SLYNKO EI KHANDOZHKO AG VYGRANENKO YK

Citation: Vv. Slynko et al., NUCLEAR-MAGNETIC-RESONANCE SPECTRA OF SN-119 AND TE-125 IN SNTE AND SNTE-MN, Semiconductors, 31(10), 1997, pp. 1021-1024

PHOTOELECTRIC PROPERTIES OF PB1-XGEXTE(GA,YB) SOLID-SOLUTIONS

Authors: VYGRANENKO YK SLYNKO EI

Citation: Yk. Vygranenko et Ei. Slynko, PHOTOELECTRIC PROPERTIES OF PB1-XGEXTE(GA,YB) SOLID-SOLUTIONS, Semiconductors, 30(10), 1996, pp. 981-982

RESONANT STATE OF 4F(14 13) YB ION IN PB1-XGEXTE/

Authors: GRODZICKA E DOBROWOLSKI W STORY T SLYNKO EI VYGRANENKO YK WILLEKENS MMH SWAGTEN HJM DEJONGE WJM

Citation: E. Grodzicka et al., RESONANT STATE OF 4F(14 13) YB ION IN PB1-XGEXTE/, Acta Physica Polonica. A, 90(4), 1996, pp. 801-804

SELECTIVE PHOTOCONDUCTIVITY INDUCED IN PBTE(GA) BY A LOCAL PHONON MODE

Authors: BELOGOROKHOV AI IVANCHIK II PONOMAREV SV KHOKHLOV DR SLYNKO EI

Citation: Ai. Belogorokhov et al., SELECTIVE PHOTOCONDUCTIVITY INDUCED IN PBTE(GA) BY A LOCAL PHONON MODE, JETP letters, 63(5), 1996, pp. 353-357

COMPOSITION OF LEAD-GERMANIUM-TIN-TELLURIUM EPITAXIAL LAYERS GROWN INA QUASI-CLOSED REACTOR

Authors: VODOPYANOV VN KONDRATENKO MM SLYNKO EI

Citation: Vn. Vodopyanov et al., COMPOSITION OF LEAD-GERMANIUM-TIN-TELLURIUM EPITAXIAL LAYERS GROWN INA QUASI-CLOSED REACTOR, Inorganic materials, 32(9), 1996, pp. 960-962

COMBINED DOPING OF PB1-XSNXTE EPITAXIAL LAYERS

Authors: VODOPYANOV VN KONDRATENKO MM SLYNKO EI

Citation: Vn. Vodopyanov et al., COMBINED DOPING OF PB1-XSNXTE EPITAXIAL LAYERS, Inorganic materials, 32(8), 1996, pp. 840-842

ELECTRICAL-PROPERTIES OF YTTERBIUM-DOPED PB1-XGEXTE SOLID-SOLUTIONS

Authors: VYGRANENKO YK SLYNKO VE SLYNKO EI

Citation: Yk. Vygranenko et al., ELECTRICAL-PROPERTIES OF YTTERBIUM-DOPED PB1-XGEXTE SOLID-SOLUTIONS, Inorganic materials, 31(10), 1995, pp. 1219-1220

DEEP STATES IN GALLIUM-DOPED PB1-XSNXTE SOLID-SOLUTIONS

Authors: VYGRANENKO YK SLYNKO VV SLYNKO EI

Citation: Yk. Vygranenko et al., DEEP STATES IN GALLIUM-DOPED PB1-XSNXTE SOLID-SOLUTIONS, Semiconductors, 27(8), 1993, pp. 767-768

INFLUENCE OF DOPING WITH GALLIUM ON THE PROPERTIES OF PB1-XGEXTE SOLID-SOLUTIONS

Authors: AKIMOV BA ALBUL AV IVANCHIK II RYABOVA LI SLYNKO EI KHOKHLOV DR

Citation: Ba. Akimov et al., INFLUENCE OF DOPING WITH GALLIUM ON THE PROPERTIES OF PB1-XGEXTE SOLID-SOLUTIONS, Semiconductors, 27(2), 1993, pp. 194-196

PHOTOELECTRIC PROPERTIES OF PB1-X-YSNXGEYTE - IN EPITAXIAL-FILMS

Authors: CHISHKO VF DIROCHKA AI KASATKIN IL OSIPOV VV SLYNKO EI TRETINIK VV

Citation: Vf. Chishko et al., PHOTOELECTRIC PROPERTIES OF PB1-X-YSNXGEYTE - IN EPITAXIAL-FILMS, Applied physics. A, Solids and surfaces, 57(6), 1993, pp. 567-572

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