Citation: Ov. Smolskii et al., STUDY OF THE FORMATION PROCESS OF SI CEO2 STRUCTURE BOUNDARY BY THE X-RAY PHOTOELECTRON-SPECTROSCOPY/, Pis'ma v Zurnal tehniceskoj fiziki, 22(3), 1996, pp. 23-28
Authors:
SMOLSKII OV
MAMUTIN VV
KARTENKO NF
DENISOV DV
KOPEV PS
MELEKH BT
Citation: Ov. Smolskii et al., CHARACTERISTICS OF EPITAXIAL-GROWTH OF CE O2 FILMS ON SILICON SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 22(1), 1996, pp. 68-73