Citation: T. Soga et al., HIGH-EFFICIENCY ALGAAS SI MONOLITHIC TANDEM SOLAR-CELL GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 78(6), 1995, pp. 4196-4199
Citation: Y. Hashimoto et al., ISOLATION OF TEMPERATURE-SENSITIVE MUTANT S OF BOMBYX-MORI NUCLEAR POLYHEDROSIS-VIRUS, Nippon Oyo Dobutsu Konchu Gakkai-Shi, 39(1), 1995, pp. 33-37
Authors:
KUTSUMI H
ROKUTAN K
SOGA T
NISHIMURA K
FUJIMOTO S
KAWAI K
Citation: H. Kutsumi et al., EXPRESSION OF TGF-BETA IN GASTRIC-MUCOSAL LESIONS AND ITS MODIFICATION BY HELICOBACTER-PYLORI INFECTION, Gastroenterology, 108(4), 1995, pp. 735-735
Citation: T. Soga et al., MINORITY-CARRIER PROPERTIES OF GAAS ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 33(3A), 1994, pp. 1494-1498
Citation: Mj. Yang et al., ALXGA1-XAS SI (X=0-0.22) TANDEM SOLAR-CELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 33(12A), 1994, pp. 6605-6610
Citation: H. Nishikawa et al., ETCH PIT OBSERVATION OF GAP GROWN ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 33(12A), 1994, pp. 6654-6655
Citation: Mj. Yang et al., HIGH-EFFICIENCY GAAS SI MONOLITHIC 3-TERMINAL CASCADE SOLAR-CELLS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 2, 33(5B), 1994, pp. 120000712-120000714
Authors:
SOGA T
UEHIRO M
AZUMA Y
YANG M
JIMBO T
UMENO M
Citation: T. Soga et al., TIME-RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION OF GAAS AND ALGAAS ON SI SUBSTRATE GROWN BY MOCVD, Solar energy materials and solar cells, 35(1-4), 1994, pp. 75-81
Citation: T. Soga et al., EPITAXIAL-GROWTH OF A 2-DIMENSIONAL STRUCTURE OF GAP ON A SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 82-3, 1994, pp. 64-69
Citation: T. Soga et al., HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF III-V COMPOUNDS ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 145(1-4), 1994, pp. 358-362
Citation: T. Soga et al., OBSERVATION OF LATTICE-RELAXATION AT THE GAASP GAAS INTERFACE BEYOND THE CRITICAL THICKNESS BY TRANSMISSION ELECTRON-MICROSCOPY/, Journal of applied physics, 75(9), 1994, pp. 4510-4514
Authors:
TANAKA T
MORIGAMI M
OIZUMI H
SOGA T
OGAWA T
MURAI F
Citation: T. Tanaka et al., PREVENTION OF RESIST PATTERN COLLAPSE BY RESIST HEATING DURING RINSING, Journal of the Electrochemical Society, 141(12), 1994, pp. 120000169-120000171
Citation: T. Soga et al., CHARACTERIZATION OF ANTIPHASE DOMAIN IN GAP ON MISORIENTED (001) SI SUBSTRATE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 32(11A), 1993, pp. 4912-4915
Citation: T. Soga et al., EFFECTS OF THICKNESS ON DISLOCATIONS IN GAP ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 32(6A), 1993, pp. 767-769
Citation: T. Soga et Y. Inoue, DETERMINATION OF CATECHOLAMINES IN URINE AND PLASMA BY ONLINE SAMPLE PRETREATMENT USING AN INTERNAL SURFACE BORONIC ACID GEL, Journal of chromatography. Biomedical applications, 620(2), 1993, pp. 175-181
Authors:
SOGA T
SUZUKI T
MORI M
JIANG ZK
JIMBO T
UMENO M
Citation: T. Soga et al., ELECTRICAL-PROPERTIES OF GAP ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 132(3-4), 1993, pp. 414-418
Citation: T. Soga et al., THE EFFECTS OF THE GROWTH-PARAMETERS ON THE INITIAL-STAGE OF EPITAXIAL-GROWTH OF GAP ON SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 132(1-2), 1993, pp. 134-140
Citation: T. Soga et al., DISLOCATION GENERATION MECHANISMS FOR GAP ON SI GROWN BY METALORGANICCHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 63(18), 1993, pp. 2543-2545