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SB-INDUCED INTERATOMIC BOND DISTANCE STABILIZATION ON INP(100) SURFACE
Authors: MANGAT PS SOUKIASSIAN P HUTTEL Y GRUZZA B PORTE A
Citation: Ps. Mangat et al., SB-INDUCED INTERATOMIC BOND DISTANCE STABILIZATION ON INP(100) SURFACE, Applied physics letters, 64(7), 1994, pp. 863-865
GEOMETRY AND MODE OF GROWTH OF ALKALI METAL SI(100)2X1 INTERFACES/
Authors: SOUKIASSIAN P SPIESS L SCHIRM KM MANGAT PS KUBBY JA TANG SP FREEMAN AJ
Citation: P. Soukiassian et al., GEOMETRY AND MODE OF GROWTH OF ALKALI METAL SI(100)2X1 INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1431-1438
PB GAAS(100) - BAND BENDING, ADATOM-INDUCED GAP STATES AND SURFACE DIPOLE/
Authors: CHEN W KAHN A MANGAT PS SOUKIASSIAN P FLOREZ LT HARBISON JP PALMSTROM CJ
Citation: W. Chen et al., PB GAAS(100) - BAND BENDING, ADATOM-INDUCED GAP STATES AND SURFACE DIPOLE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1571-1574
SB-INDUCED SURFACE STABILIZATION OF INP(100) WAFER BEYOND 500-DEGREES-C
Authors: SOUKIASSIAN P MANGAT PS HUTTEL Y HURYCH Z GRUZZA B PORTE A
Citation: P. Soukiassian et al., SB-INDUCED SURFACE STABILIZATION OF INP(100) WAFER BEYOND 500-DEGREES-C, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1603-1608
HREELS STUDY OF SUBSURFACE OXYGEN ON THE NI(100) SURFACE
Authors: OEHLERS M VINCHON T SZEFTEL J SOUKIASSIAN P
Citation: M. Oehlers et al., HREELS STUDY OF SUBSURFACE OXYGEN ON THE NI(100) SURFACE, Journal of electron spectroscopy and related phenomena, 64-5, 1993, pp. 269-278
IMPORTANCE OF DEFECTS AND DOPANT NATURE IN ALKALI-METAL III-V-SEMICONDUCTOR INTERFACE FORMATION AND PROMOTED OXIDATION
Authors: SCHIRM KM SOUKIASSIAN P MANGAT PS HURYCH Z SOONCKINDT L BONNET JJ
Citation: Km. Schirm et al., IMPORTANCE OF DEFECTS AND DOPANT NATURE IN ALKALI-METAL III-V-SEMICONDUCTOR INTERFACE FORMATION AND PROMOTED OXIDATION, Applied surface science, 68(3), 1993, pp. 417-425
SYNCHROTRON-RADIATION STUDY OF RB P-GASB(110) INTERFACE FORMATION ANDBAND BENDING AT LOW-TEMPERATURE/
Authors: BONNET JJ SOONCKINDT L SCHIRM KM NISHIGAKI S HIRICOVINI K BONNET JE SOUKIASSIAN P
Citation: Jj. Bonnet et al., SYNCHROTRON-RADIATION STUDY OF RB P-GASB(110) INTERFACE FORMATION ANDBAND BENDING AT LOW-TEMPERATURE/, Applied surface science, 68(3), 1993, pp. 427-432
O2 K/GE(100)2X1 AND O2/CS/GE(100)2X1 - PUZZLING BEHAVIOR OF K AND CS IN THE OXIDATION OF GERMANIUM/
Authors: SCHIRM KM SOUKIASSIAN P BORENSZTEIN Y NISHIGAKI S DONG GS BONNET JE HRICOVINI K
Citation: Km. Schirm et al., O2 K/GE(100)2X1 AND O2/CS/GE(100)2X1 - PUZZLING BEHAVIOR OF K AND CS IN THE OXIDATION OF GERMANIUM/, Applied surface science, 68(3), 1993, pp. 433-438
DETERMINATION OF THE NA SI(100)2X1 SURFACE AND INTERFACE GEOMETRY BY POLARIZATION-DEPENDENT PHOTOEMISSION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE AND AB-INITIO TOTAL-ENERGY MOLECULAR CALCULATIONS/
Authors: MANGAT PS SOUKIASSIAN P SCHIRM KM SPIESS L TANG SP FREEMAN AJ HURYCH Z DELLEY B
Citation: Ps. Mangat et al., DETERMINATION OF THE NA SI(100)2X1 SURFACE AND INTERFACE GEOMETRY BY POLARIZATION-DEPENDENT PHOTOEMISSION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE AND AB-INITIO TOTAL-ENERGY MOLECULAR CALCULATIONS/, Physical review. B, Condensed matter, 47(24), 1993, pp. 16311-16321
COMBINED THEORETICAL AND EXPERIMENTAL-DETERMINATION OF THE ATOMIC-STRUCTURE AND ADSORPTION SITE OF NA ON THE SI(100)2X1 SURFACE
Authors: SPIESS L MANGAT PS TANG SP SCHIRM KM FREEMAN AJ SOUKIASSIAN P
Citation: L. Spiess et al., COMBINED THEORETICAL AND EXPERIMENTAL-DETERMINATION OF THE ATOMIC-STRUCTURE AND ADSORPTION SITE OF NA ON THE SI(100)2X1 SURFACE, Surface science, 289(3), 1993, pp. 631-637
LOW-ENERGY AR-INDUCED MODIFICATION OF SURFACE ATOMIC BOND LENGTHS ON INP(100) WAFER( ION BOMBARDMENT)
Authors: MANGAT PS SOUKIASSIAN P HUTTEL Y HURYCH Z GRUZZA B PORTE A
Citation: Ps. Mangat et al., LOW-ENERGY AR-INDUCED MODIFICATION OF SURFACE ATOMIC BOND LENGTHS ON INP(100) WAFER( ION BOMBARDMENT), Applied physics letters, 63(14), 1993, pp. 1957-1959
AL2O3+X AL INTERFACE FORMATION BY PROMOTED OXIDATION USING AN ALKALI-METAL AND REMOVAL OF THE CATALYST/
Authors: HUTTEL Y BOURDIE E SOUKIASSIAN P MANGAT PS HURYCH Z
Citation: Y. Huttel et al., AL2O3+X AL INTERFACE FORMATION BY PROMOTED OXIDATION USING AN ALKALI-METAL AND REMOVAL OF THE CATALYST/, Applied physics letters, 62(19), 1993, pp. 2437-2439
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